Allicdata Part #: | HUF75344A3-ND |
Manufacturer Part#: |
HUF75344A3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 55V 75A TO-3PN |
More Detail: | N-Channel 55V 75A (Tc) 288.5W (Tc) Through Hole TO... |
DataSheet: | HUF75344A3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | UltraFET™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 208nC @ 20V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4855pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 288.5W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-3PN |
Package / Case: | TO-3P-3, SC-65-3 |
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HUF75344A3 is an N-channel enhancement mode MOSFET (metal-oxide-semiconductor field-effect transistor) produced by STMicroelectronics. It is known as a voltage-controlled resistor that is based on a MOSFET technology, and can be used in the design of analog and digital circuits. It is especially suitable for high frequency switching applications.
The application field of HUF75344A3 includes power management, automotive applications, telecommunications, and consumer electronic products. With load switch functionality, it is capable of providing a low ON-state resistance and robust EOS (electrical overstress) capabilities. It also has a wide operating temperature range and can be used in circuits requiring temperatures of up to 175°C.
HUF75344A3 has several features which make it a suitable choice for use in high frequency switching applications. Firstly, it has a low output impedance, meaning that it can switch large amounts of power with minimal resistive losses. This also makes it suitable for AC/DC converters and voltage regulator circuits.
In addition, the device has a low gate charge, meaning that the device does not require a large amount of current for switching. This makes it well suited for high frequency applications. It also has a low input capacitance, meaning that the gate will not require too much current when switching.
The working principle of HUF75344A3 is based on the MOSFET technology. MOSFETs are used in circuits as fast-switching switches and in the design of analog and digital systems. They operate by using an electrostatic field to control the flow of electrons across the device. In a MOSFET, the gate terminal controls the flow of electrons by varying the voltage applied between the drain and the source terminals.
The HUF75344A3 is an N-channel enhancement mode device, meaning that it will conduct current when the voltage applied to the gate is higher than the source. When the voltage drops, the device will stop conducting current. The device is also capable of very fast switching speeds due to its low switching times.
HUF75344A3 is suitable for a range of high frequency switching applications. It is a cost-effective solution for power management and other applications requiring high frequency switching. It provides a low ON-state resistance, wide operating temperature range, low gate charge, and low input capacitance, making it suitable for high frequency applications.
The specific data is subject to PDF, and the above content is for reference
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