Allicdata Part #: | IRF6720S2TR1PBFTR-ND |
Manufacturer Part#: |
IRF6720S2TR1PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 11A DIRECTFET |
More Detail: | N-Channel 30V 11A (Ta), 35A (Tc) 1.7W (Ta), 17W (T... |
DataSheet: | IRF6720S2TR1PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta), 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id: | 2.35V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1140pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 1.7W (Ta), 17W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DIRECTFET S1 |
Package / Case: | DirectFET™ Isometric S1 |
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The IRF6720S2TR1PBF is a high performance, N-channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed to operate up to a voltage of 100V. It is a low on-resistance MOSFET ideal for use in switching applications. IRF6720S2TR1PBF is a mosfet that is used in a wide range of electronic applications such as power supplies, motor and solenoid control, and automotive circuits.
IRF6720S2TR1PBF is a general-purpose MOSFET offering high current capability and low “on” resistance. It is offered with over-current protection, driver stages, and can be used with a variety of control circuits to create a wide range of power control solutions. It features a fast switching time and low voltage drop across its drain-source, making it ideal for high current switching applications.
The IRF6720S2TR1PBF can be used in a variety of applications such as switching power supplies, circuit switching, motor and solenoid control, and automotive circuits. It is suitable for use in DC-DC converters, digital logic circuits, power amplifiers, power switching systems, and motor-drive applications. It can also be used as an operational amplifier in audio applications.
The working principle of IRF6720S2TR1PBF is simple. The MOSFET is a three terminal component comprising of a source, gate and a drain terminals. When a small voltage is developed between the gate and source terminals, the gate voltage will turn on the device. This results in the current flow from the drain to the source. The size of gate voltage affects the amount of current flowing across the channel created between the source and drain. Higher gate voltage leads to higher current conduction. The channel closes when the gate voltage is reversed.
IRF6720S2TR1PBF can be used in a variety of applications where a high current capacity is needed such as switching power supplies or motor and solenoid control. Also, it can be used as an operational amplifier in audio applications due to its low voltage drop across drain-source. It is also an ideal choice for automotive circuits due to its fast switching time and low resistance.
In conclusion, the IRF6720S2TR1PBF is an ideal choice for many power control applications due to its low “on” resistance and high current capability. It is also suitable for use in automotive circuits due to its fast switching time and low voltage drop. Additionally, it can also be used as an operational amplifier in audio applications.
The specific data is subject to PDF, and the above content is for reference
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