AON6240 Discrete Semiconductor Products

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The AON6240 is a unique high-performance N-channel MOSFET with high Input/Output capacitance and high current ratings. It is used for power tasks in light weight and space constrained applications, such as automotive, medical, consumer, and industrial applications. AON Technologies introduces an innovative single-chip MOSFET, known as the AON6240, which offers increased efficiency, lighter weight and smaller size. This article will delve into the application field and working principle of the AON6240.

The display, RF, energy saving and related power applications require more and more excellent MOSFETs. The AON6240 precisely meets these criteria by providing the most comprehensive, best-in-class features and performance. The device is packaged in a small 0.5mm2 lead frame, resulting in a highly efficient, low-cost solution with a low-thermal-threshold RDS(on) to minimize power loss. Moreover, the AON6240 features a built-in ultra-low off-state leakage current, which, as compared to traditional architectures, enables a much lower current consumption from the main power supply and thus improving system efficiency.

Power MOSFETs are commonly used for switching applications such as DC-DC converters, motor control, and other power electronics applications. The AON6240 is a single N-channel logic level MOSFET perfect for such requirements. Traditional logic level MOSFETs have several drawbacks such as a relatively high thermal threshold, high on-resistance (RDS(on)), and very low current capability. To counter such drawbacks, the AON6240 features superior power, low on-resistance, low thermal threshold, and excellent thermal performance. In addition, the device has a wide body temperature range of -40°C to 150°C, making it suitable for any application.

The working principle of the AON6240 is based upon an advanced power MOSFET architecture, utilizing an ultra-wide band-gap (UWBG) process. This UWBG process allows for higher current and power capability without the need for large die size. Additionally, the process utilizes an N-channel MOSFET to attain the flawless switching characteristics. The power MOSFET has an integrated diffused N-channel structure with a large area gate which allow for higher power performance. Moreover, the UWBG process is designed to reduce the effects of temperature on the electrical properties of the device, improving its thermal performance.

The AON6240 also features an integrated enhanced-response transistor (ERT) architecture which provides superior current capability. This is achieved by switching the drain and the source. The ERT architecture also helps to minimize the Gate-source capacitance and ensure a fast response to switching signals. Moreover, the device features a high drain-source breakdown voltage (BVDSS) of up to 60V which makes it suitable for high-power/voltage applications. Additionally, the device has a built-in ESD protection mechanism which ensures the device is safe from ESD events.

In conclusion, the AON6240 is a single N-channel logic level MOSFET providing superior performance, light weight and space savings. It features an ultra-wide bandgap process that provides superior current capabilities and excellent thermal performance. This technology allows for higher current and power capabilities without the need for a larger die size. The device also has a built-in ESD protection and a high drain-source breakdown voltage making it suitable for a wide range of applications. It is well suited for use in power tasks in light weight and space constrained applications, such as automotive, medical, consumer, and industrial applications.

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