AON6200L

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AON6200L is a low voltage enhancement-mode DMOS transistor designed for full-bridge power applications. It is designed to reduce the power supply and operational stress on the user’s system. The backside is source terminal connected internally to the substrate to minimize shoot-through current in a half-bridge configuration. AON6200L is also very easy to use; it has a low RDson and has integrated thermal protection to protect the device from over-temperature condition. It is a robust, fast and unique solution for motor control and sensor conditioning applications.

AON6200L Application Field

AON6200L is used for low voltage full-bridge power applications, such as motor control, motor driver, and sensor conditioning applications. It is suitable for brushless motor control as well as other motor control applications. The device also offers higher integration and efficiency, as well as improved performance and reduced thermal stress. Furthermore, AON6200L is also suitable for applications where higher voltage and efficiency are required, such as automotive and lighting applications.

AON6200L Working Principle

AON6200L is an enhancement-mode DMOS transistor. It is designed to reduce total applied power and operational stress on the user’s system. The backside is connected internally to the substrate in order to minimize shoot-through current in a half-bridge configuration. Internal thermal protection is provided to protect the device from over-temperature conditions.

The device operates in enhancement mode when a voltage greater than threshold is applied to its gate. When this happens, charge carriers in the channel are generated, causing the channel to become conducting. This increases the channel current, which dramatically increases the drain-source current. As the drain-source voltage is increased, the device eventually saturates and the drain-source current is limited to a value determined by the gate current.

AON6200L is also designed to reduce shield current. When the drain-source voltage is applied, the substrate will become increasingly conductive and the shield current will start to increase. AON6200L is designed to limit the shield current to a minimum, allowing for even higher efficiency.

AON6200L also has a low input capacitance, which enables fast switching. This allows the device to be used with high frequency PWM signals, making it suitable for brushless motor control applications. Furthermore, the device has an integrated charge pump and dedicated pins to support PWM control, which eliminates the need for external components.

In summary, AON6200L is a low-voltage, enhancement-mode DMOS transistor that is designed to reduce the power supply and operational stress on the user’s system. It is suitable for a variety of motor control and sensor conditioning applications, owing to its low RDson, integrated thermal protection and fast switching capabilities.

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