AON6246

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AON6246 is a type of heterogeneous Si/SiGe N-channel radio field effect transistor (FET). It was specifically designed for use in 5G-NR power amplifiers. It is intended for use in applications requiring high output power, low noise figure, and low voltage operations, such as high speed 4G/5G access points, small cell base stations, base stations, and customer premises equipments.

The AON6246, manufactured by Alpha and Omega Semiconductor, features a high performance SiGe process with a gate oxide thickness of just 8nm. This allows it to achieve better power efficiency and low noise figure, making it suitable for use in a wide range of power amplifiers. The transistor is housed in a small 2.6m² package and can operate at voltages between 6V and 36V, making it ideal for use in both mobile devices and network equipment.

The working principle of the AON6246 is based on the radio frequency (RF) modulation process. This process involves using a modulated digital signal to create an analog signal. The AON6246 is used to amplify this analog signal so that it can be sent out to the antenna for transmission. The AON6246 operates in either pulsed or continuous wave (CW) modes and is biased with a constant drain supply.

The AON6246 is an attractive device for 5G-NR power amplifiers due to its high power efficiency, low noise figure, small package, and wide range of operating voltages. It has been proven to be a reliable and cost-effective solution for 4G/5G small cell base stations, base stations, and customer premises equipments. Additionally, it can be used in a variety of other applications such as radio transmitters and radio receivers.

In conclusion, the AON6246 is a highly efficient and reliable single radio FET for 5G-NR power amplifiers. It offers a wide range of operating voltages and is housed in a small package. It is suitable for use in a variety of applications, including 4G/5G access points, small cell base stations, base stations, and customer premises equipments.

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