Allicdata Part #: | 785-1341-2-ND |
Manufacturer Part#: |
AON6408L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V 14.5A 8DFN |
More Detail: | N-Channel 30V 14.5A (Ta), 25A (Tc) 2.4W (Ta), 31W ... |
DataSheet: | AON6408L Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 14.5A (Ta), 25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 2.4W (Ta), 31W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-DFN (5x6) |
Package / Case: | 8-PowerSMD, Flat Leads |
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AON6408L is an advanced logic-level N-channel metal–oxide–semiconductor field-effect transistor (MOSFET). It is designed and developed by Alpha & Omega Semiconductor. The AON6408L is a highly reliable monolithic device with a built-in drain-source breakdown voltage of 30 V. It is also integrated with ESD protection devices that facilitate superior electrostatic discharge (ESD) performance. AON6408L features low drain-source on-state resistance (RDSon) and fast switching speed that makes it ideal for high voltage, high frequency and high power applications.
The main application fields of the AON6408L are audio amplifiers, power converters, power supplies, motor control, charger/discharging circuits, switching-mode power supplies, inverters, and DC-DC converters. It is suitable for high-power and high-frequency switching applications with a drain-source voltage rating (VDS) of up to 30 V. The AON6408L is designed to operate in a wide temperature range, from -40°C to 150°C. It is available in a suitable package of 8 pin SOP PLCC or DFN.
The working principle of AON6408L is similar to a regular FET. It consists of a gate, source and drain. When a gate voltage is applied, the source and drain are connected via a thin layer of silicon, referred to as the channel. Like a regular FET, the AON6408L controls the current flow between the source and drain based on the gate voltage. The higher the gate voltage the more current will flow. The channel resistance of AON6408L is adjustable with the gate voltage and when an applied voltage is set, the channel resistance will remain constant for the given voltage and temperature.
The AON6408L is an important component in power circuits and switching control applications. Its advantages over other MOSFETs are the ability to sustain a large drain-source breakdown voltage and high-power ratings. This makes it a suitable choice for high-power, high-frequency applications, including in audio amplifiers, power converters, motor control and more. The device is also equipped with ESD protection, which makes it suitable for use in harsh environments. Furthermore, AON6408L features low RDSon, which makes it possible to achieve higher efficiency power conversion and switching in minimal time.
The specific data is subject to PDF, and the above content is for reference
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