Allicdata Part #: | AON6282-ND |
Manufacturer Part#: |
AON6282 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 80V 26.5A 8DFN |
More Detail: | N-Channel 80V 26.5A (Ta), 85A (Tc) 7.4W (Ta), 83W ... |
DataSheet: | AON6282 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80V |
Current - Continuous Drain (Id) @ 25°C: | 26.5A (Ta), 85A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 5.6 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 51nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2848pF @ 40V |
FET Feature: | -- |
Power Dissipation (Max): | 7.4W (Ta), 83W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-DFN (5x6) |
Package / Case: | 8-PowerSMD, Flat Leads |
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AON6282 is a n-channel, N-type Field-Effect Transistor (NFET). It is a low voltage device designed to operate on low supply voltages in applications that require increased power efficiency such as RS485 and RS422 data communication systems. It is suitable for automotive applications and other heavy-duty operations that require a low on-resistance FET.
The AON6282 integrates a low noise amplifier, an NMOS FET, two voltage regulator transistors and a diodes array into a single package. It is manufactured using an advanced process technology that combines a two-dimensional silicon-on-insulator (SOI) process and a thin wafer thinning technology. As a result, the device can operate at very low voltages and offers a very low on-resistance.
The AON6282’s application field comprises various data communication systems, power switches, battery chargers and other digital and analog circuits that require low voltage operation. It is a cost effective solution for applications where other FETs are not suitable due to their lower performance and higher on-resistance values.
The working principle of the AON6282 NFET is based on the dedicated control of the source-channel junction, which is designed to provide a low on-resistance when its gate voltage is applied. When the gate voltage is increased, the source-channel junction turns off, preventing current from flowing from the source to the drain. The junction also provides an impedance that limits the amount of current that can be transferred from the gate to the drain.
The AON6282 is a low-voltage NFET, so it is important to ensure that the supply voltage is properly regulated and that transient noise is suppressed. This is especially important in automotive applications where power spikes can interfere with the functioning of the device. The device also features on-state leakage protection, which can be activated at the onset of certain conditions, such as overvoltage or short-circuit conditions.
In conclusion, the AON6282 is a great choice for applications that require low-voltage operation and increased power efficiency. Its integrated components, low on-resistance and leakage protection make it an ideal solution for various digital and analog circuits, power switches, and battery chargers. Its advanced process technology ensures that it can effectively operate at very low voltages and provide reliable performance.
The specific data is subject to PDF, and the above content is for reference
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