Allicdata Part #: | AON6780-ND |
Manufacturer Part#: |
AON6780 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V 30A DFN5X6 |
More Detail: | N-Channel 30V 30A (Ta), 85A (Tc) 2.5W (Ta), 83W (T... |
DataSheet: | AON6780 Datasheet/PDF |
Quantity: | 1000 |
Gate Charge (Qg) (Max) @ Vgs: | 76nC @ 10V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 9600pF @ 15V |
FET Feature: | Schottky Diode (Body) |
Power Dissipation (Max): | 2.5W (Ta), 83W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-DFN (5x6) |
Package / Case: | 8-PowerSMD, Flat Leads |
Series: | SRFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Ta), 85A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 1.7 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
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AON6780 is a single-channel Advanced Open-Drain NMOSFET, designed and crafted to enable comfortable usage wiyh a wide array of modern applications. With an on-drain current of 25mA and an on-drain resistance of only 2Ω, this device provides an array of possibilities for users. Despite its small stature and manageable size, it features a low-power CMOS process and advanced thermal protection.
It has the ability to provide a wide range of solutions for applications that must be fast and power efficient. These applications include, but are not limited to, energy management, power amplification, lighting solutions, and audio solutions. Possessing an operating voltage range between 3V and 5.5V, this device is especially well-suited for low-power applications that require the flexibility of controlling voltage.
A hallmark characteristic of the AON6780 is its incredibly low power consumption. This is due in large part to the device\'s low-power CMOS process, which helps control power expenditure through the usage of advanced thermal protection. This helps to ensure reliable operation in demanding and harsh environments, even in the most challenging power demands.
Another attribute which sets the AON6780 apart is its single-channel advanced open-drain NMOSFET. With this unique feature, users are afforded a high degree of flexibility when controlling current, since more current can be supplied to the device than with a standard MOSFETs. Coupling this feature with the device\'s wide operating range, users are able to set up their desired levels of power output and settings with a high degree of precision.
The AON6780\' working principle consists of using a voltage on the gate terminal to create an electric field, that results in an induced electric field in the form of an accumulation layer near the gate. This accumulation layer creates a conductive pathway between the MOSFET\'s source and drain terminals, allowing electrons to flow through and creating a potential difference across them. This potential difference causes current to flow through the load circuit.
In summary, the AON6780 provides a great array of possibilities for users who need a convenient and power-efficient solution for modern applications. Its single-channel advanced open-drain NMOSFET feature, low power consumption rate, and wide operating range make it the perfect tool for a wide variety of demanding applications.
The specific data is subject to PDF, and the above content is for reference
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