Allicdata Part #: | 2N7002DITR-ND |
Manufacturer Part#: |
2N7002-7 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 115MA SOT23-3 |
More Detail: | N-Channel 60V 115mA (Ta) 370mW (Ta) Surface Mount ... |
DataSheet: | 2N7002-7 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 370mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7.5 Ohm @ 50mA, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 115mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The N-channel enhancement-mode 2N7002-7 transistor is a popular choice for many circuits because of its wide range of applications and its working principle. This transistor comes in two different packages, a thru-hole version and a surface-mount version. It is typically used in low-current applications and its maximum power dissipation rating is 500mW.
The 2N7002-7 is a Small Signal MOSFET, or Metal Oxide Semiconductor Field Effect Transistor. It is a voltage-controlled FET – it is technically an insulated gate bipolar transistor (IGBT). Unlike bipolar transistors, which have both NPN and PNP types, MOSFETs have only one type, n-type, which is N-channel. This makes the 2N7002-7 one of the simplest FET transistors to use, as no polarity is required.
This type of MOSFET is manufactured from semiconductor materials with differing electron affinity. These semiconductor materials are bonded to a thin gate oxide layer that acts as the insulating layer between the source and drain terminals. An electric field applied between the source and the drain changes the conductive path of the MOSFET. A change in the electric field or current flow will result in a change in the conductivity or resistance between the source and the drain.
The maximum voltage on any terminal of the 2N7002-7 must not exceed 25 volts, with a recommended maximum drain voltage of 20 volts, in order to keep the device from becoming damaged. The maximum current it can handle is 500mA. This device has a very low on-resistance, so it can be used in high-current applications where a low voltage drop between the source and the drain is desired.
The 2N7002-7 is used in a variety of applications, including switching, logic level shifting, power conversion, and switching regulators. In these applications, the 2N7002-7 is a popular choice because of its low on-resistance and low gate threshold voltage. It can also be used as a buffer to transfer data signals between two systems, such as a microcontroller and an embedded system.
The 2N7002-7 is also commonly used in motor control applications, such as motor drives, dc-dc converters, and Class D audio amplifiers. It is also used in voltage regulation circuits, in which it is used to control the output voltage of a power supply. It can be used in power supply circuits in order to protect against over-voltage and over-current conditions.
In addition to these applications, the 2N7002-7 can also be used in digital logic circuits, as it has a fast switching speed and low gate threshold voltage. This makes it well suited for applications such as fast on/off switching, and it can be used to turn an output on or off with a digital signal. It is also used in high speed switching applications, such as high speed data transmission.
The working principle of the 2N7002-7 is very straightforward. When a positive voltage is applied to the gate, the flow of electrons through the channel increases and the device turns on. Conversely, when a negative voltage is applied to the gate, the flow of electrons through the channel decreases and the device turns off. The resistance between the source and the drain can be adjusted by varying the gate voltage. This makes the 2N7002-7 an ideal choice for a wide range of applications.
In summary, the 2N7002-7 is a popular choice for many circuits because of its wide range of applications and its working principle. It is a N-channel MOSFET that has a very low on-resistance and is suitable for high-current applications. It is used in many digital logic circuits, switching regulators, and motor control circuits. It is also used in voltage regulation circuits and power supply circuits. The working principle of the 2N7002-7 is very straightforward and its resistance can be adjusted by varying the gate voltage.
The specific data is subject to PDF, and the above content is for reference
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