2N7002-E3 Allicdata Electronics

2N7002-E3 Discrete Semiconductor Products

Allicdata Part #:

2N7002-E3TR-ND

Manufacturer Part#:

2N7002-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 115MA SOT23
More Detail: N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount ...
DataSheet: 2N7002-E3 datasheet2N7002-E3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 200mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The N7002-E3 is a type of FET (field-effect transistor). It is a single MOSFET (metal-oxide-semiconductor FET) that has excellent performance characteristics in analog and digital operations. It is used in audio and video applications, as well as switches, amplifiers, and other circuits.

The 2N7002-E3 MOSFET is an enhancement-mode, single-gate N-channel MOSFET. It is designed to operate in both digital and analog circuits. It is manufactured using advanced technologies allowing for high operational performance and reliability.

The main advantage of the N7002-E3 is the low on-resistance it provides. The maximum continuous drain current is rated at 200mA, which is enough to power a small device. It also boasts a low gate threshold voltage, a low input capacitance, and a low on-resistance. All these features make it an ideal choice for high-speed, low-power applications.

The 2N7002-E3 has a wide range of applications. It is typically used in analog and digital circuits as well as in audio and video applications. It is also very popular in switches, amplifiers, and other circuits. For example, it can be used as a switch to control the volume of an audio device or to control the intensity of a light. It can also be used as an amplifier, to boost the power of small electronic devices.

The working principle of the 2N7002-E3 is similar to that of other MOSFETs. It has an insulated gate that can be used to control the current flow between the drain and source terminals. When voltage is applied to the gate, an electric field forms that crosses the insulation layer and causes current to flow from the source to the drain. This electric field is known as the "channel" and is responsible for the transistor\'s operation. The amount of current that can flow between the drain and source is directly proportional to the voltage applied to the gate. The higher the voltage applied to the gate, the greater the current will flow.

The 2N7002-E3 is a popular MOSFET due to its low on-resistance and high performance in analog and digital circuits. It is also versatile, allowing it to be used in a wide range of applications. It is a reliable choice for switching circuit and audio and video applications.

The specific data is subject to PDF, and the above content is for reference

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