Allicdata Part #: | 2N7002LT3-ND |
Manufacturer Part#: |
2N7002LT3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 0.115A SOT-23 |
More Detail: | N-Channel 60V 115mA (Tc) 225mW (Ta) Surface Mount ... |
DataSheet: | 2N7002LT3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 225mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7.5 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 115mA (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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2N7002LT3 Application Field and Working Principle
The 2N7002LT3 is a very small and low voltage enhancement-type metal-oxide-semiconductor field-effect transistor (MOSFET). It is a type of junction field-effect transistor (JFET), which uses a gate to control the conductivity between the source and the drain. This type of transistor is usually employed in signal switching, signal amplification, and other applications where precise control of the current is needed.
Characteristics of 2N7002LT3
The 2N7002LT3 has a breakdown voltage rating of -60V to -40V at 85°C, and its gate maximum voltage rating is +/-20V. The on-resistance of the transistor is very low and typically ranges from 0.3 ohms to 0.9 ohms at 25°C. The FET’s maximum current rating is 500 milliamps at 12V, and its maximum voltage rating is -20V. It also has a dielectric strength of 250VAC.
Applications of 2N7002LT3
The 2N7002LT3 is used in various applications such as general purpose switching, high-frequency manual switching, low voltage and low noise analog applications, and audio amplifiers. Its low on-resistance, high current rating, and low gain make it ideal for switching and amplification applications. The MOSFET has also become a popular choice for use in power-saving LED lighting applications as it is able to provide an efficient and effective current switching solution.
Working Principle of 2N7002LT3
The 2N7002LT3 is designed to operate as an enhancement-mode device, meaning that it relies on an external gate voltage to turn the device’s source-drain current on and off. It works by allowing a voltage drop across the device, which is caused by the electric field between the gate and the source. When the gate voltage is given a positive voltage, the electric field between the gate and the source increases and causes a conductive path from the source to the drain, allowing current flow.
When the gate voltage is given a negative voltage, the electric field between the gate and the source decreases, blocking the current flow between the source and the drain. When this happens, the transistor is said to be in the “off” state.
Conclusion
The 2N7002LT3 is a very useful MOSFET for applications that require precise control of the current. Its low on-resistance, high current rating, and low gain makes it ideal for low noise and low voltage analog applications. The transistor is designed to operate as an enhancement-mode device, meaning that it relies on an external gate voltage to turn the device’s source-drain current on and off.
The specific data is subject to PDF, and the above content is for reference
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