2N7002TC

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	330mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	50pF @ 25V
Vgs (Max):	±20V
Series:	--
Rds On (Max) @ Id, Vgs:	7.5 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	115mA (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The 2N7002TC is an N-Channel MOSFET made of a silicon material and belongs to the Fairchild family. This transistor is used mainly in electronic and microelectronic circuits and due to its characteristics, can be used in many different applications.In this article we will discuss the application field and working principle of the 2N7002TC, as well as its main characteristics.Application FieldThe 2N7002TC is a versatile transistor that can be used in a variety of applications. It is particularly suitable for battery powered circuits and all types of amplifier circuits.In more specific applications, this MOSFET can be used for logic circuits, switching and protection applications, as well as for analog and digital circuits. It is also especially suitable for power switching applications and power control circuits.Working PrincipleA MOSFET consists of two regions which are the source and the drain. The source and the drain act like electrical outlets, and the voltage across them can be used to control the current that flows through the transistor.When a positive voltage is applied to the Drain and a negative voltage is applied to the Source, the Gate-Source voltage increases, which allows current to flow through the transistor. This is known as enhancement-type conduction. The current can be controlled by the Gate-Source voltage, and it can be increased or decreased by changing this voltage.The 2N7002TC uses anomalous temperature behavior to prevent the transistor from overheating. This is achieved by decreasing the transistor’s drain-source resistance at increased temperature, which prevents the transistor from overheating.FeaturesThe 2N7002TC’s main features include a low on-state resistance, high voltage driving capability and high speed switching. The device has a low on-state resistance of 1 Ω max and a Gate-Drain voltage of 20 V max. This allows for a better performance under heavy load conditions.Additionally, the device has a high voltage drive capability of up to 500 mA peak and a high speed switching of up to 4 kHz, making it suitable for a variety of switching applications.ConclusionThe 2N7002TC is a versatile transistor that can be used in many different applications. It is particularly suitable for battery powered circuits and all types of amplifier circuits. The device has a low on-state resistance, high voltage driving capability and high speed switching, making it suitable for a variety of switching applications.

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