Allicdata Part #: | 2N7008OS-ND |
Manufacturer Part#: |
2N7008 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 150MA TO-92 |
More Detail: | N-Channel 60V 150mA (Ta) 400mW (Ta) Through Hole T... |
DataSheet: | 2N7008 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 400mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 25V |
Vgs (Max): | 40V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7.5 Ohm @ 50mA, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 150mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The 2N7008 is an enhancement-type field-effect transistor (FET) produced by Fairchild Semiconductor. It belongs to the group of metal-oxide-semiconductor FETs (MOSFETs) that are designed as single transistors. It is commonly used for applications such as switching, amplification and voltage regulation by controlling the voltage and current in electronic circuits.
The 2N7008 is an N-channel MOSFET, meaning it has a two-terminal channel created between its source (S) and drain (D) that permits flow of electrons in one direction only. It is the single-transistor variant of the MOSFET family, meaning it uses one transistor to control current spread in the FET. The 2N7008 is used primarily in power switching applications, and offers maximum ratings of 40 V and 5.3 A, making it suitable for low-voltage, high-current circuits.
When looking at the 2N7008, it is important to further understand what is behind its working principle. The FET works similarly to a conventional transistor, but instead of relying on a current to control the current across a channel, a voltage is used instead. This voltage, known as the Gate voltage, is applied to the Gate of the transistor. As the voltage increases, the channel between the Source and Drain becomes increasingly more conductive, allowing the electron current to flow from the Source to the Drain. As the voltage increases even further, the electrons will eventually reach the Saturation point, causing the channel to be fully conductive and allowing the Device to conduct maximum current.
Since the 2N7008 is an N-channel MOSFET, it is most commonly used in power-switching applications, such as power converters, stoves, lights, and other devices with variable output voltages. It can also be used in amplifier circuits, as the gate-to-source capacitance and gate-to-drain capacitance produces a voltage gain. Additionally, the 2N7008 can be used as a voltage regulator, allowing the device to act as a source or sink of constant current.
In conclusion, the 2N7008 is a single-transistor device that offers high current and low voltage performance, making it suitable for low-power applications. It is widely used in power switching applications and voltage regulation, thanks to its gate-to-source and gate-to-drain capacitances, which permit the device to act as an amplifier or voltage regulator. Those looking for cost-effective, high-performance solutions for low voltage, high-current applications should consider the 2N7008.
The specific data is subject to PDF, and the above content is for reference
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