Allicdata Part #: | 2SK2803-ND |
Manufacturer Part#: |
2SK2803 |
Price: | $ 0.71 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | MOSFET N-CH 450V TO-220F |
More Detail: | N-Channel 450V 3A (Ta) 30W (Tc) Through Hole TO-22... |
DataSheet: | 2SK2803 Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.64553 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 450V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2.8 Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 340pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 30W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220F |
Package / Case: | TO-220-3 Full Pack |
Description
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The 2SK2803 is a single-kilowatt J-FET power MOSFET that is designed for use as a voltage regulator or high power switch in many applications. This power transistor is often used to control high power in applications such as satellite and ground communication systems, antenna control, and various consumer applications. This transistor has some important features and a high current-handling capacity that make it a very versatile device for a number of applications. In this article, we will discuss the working principle and application field of 2SK2803.
Working Principle of 2SK2803: The working principle of 2SK2803 is based on Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It has two type of gate – the Source gate and the Drain gate. The power transistor’s gate is not connected to any external circuitry, but is electrically connected to the body of the transistor, where it acts as a resistor. This creates a voltage gradient between the Source and Drain gates, allowing current to flow between these two electrodes. When a voltage is applied to the gate, the Drain gate increases the potential of the Drain terminal and allows current to flow. In order to turn off the transistor, the voltage source must be disconnected, and the voltage on the gate must drop below the “off” threshold.
Application Field of 2SK2803: The 2SK2803 can be used for a variety of applications, such as high-power switching, voltage regulation, and various consumer applications. This power transistor can be used to control high current or power in a variety of systems, such as satellite and ground communication systems, antenna control, and various consumer applications. It is also used in automotive and industrial applications, distributed radio power systems, and power management. Additionally, it can also be used in power converters, inverters, and power supply designs.
In conclusion, the 2SK2803 is a versatile single-kilowatt J-FET power MOSFET that is popularly used in many applications due to its important features and high current-handling capacity. It works on the principle of MOSFET and is used in high-power switching, voltage regulation, distributed radio power systems, and power management. This power transistor is also used in automotive and industrial applications, distributed radio power systems, power converters, power supply designs, and various consumer applications.
The specific data is subject to PDF, and the above content is for reference
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