2SK3820-DL-1E Allicdata Electronics
Allicdata Part #:

2SK3820-DL-1E-ND

Manufacturer Part#:

2SK3820-DL-1E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 26A
More Detail: N-Channel 100V 26A (Ta) 1.65W (Ta), 50W (Tc) Surfa...
DataSheet: 2SK3820-DL-1E datasheet2SK3820-DL-1E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 60 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: --
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 20V
FET Feature: --
Power Dissipation (Max): 1.65W (Ta), 50W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-2
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Description

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2SK3820-DL-1E is a type of single N-channel MOSFET produced by Fairchild Semiconductor. This?MOSFET is designed for high voltage and high speed power switching applications and is suitable for use in various low profile, high-density packages.

The 2SK3820-DL-1E is a single N-channel MOSFET with an ultra-low threshold voltage of 1.1V, and a drain to source voltage rating of 30V with a continuous drain current of 7.8A. This MOSFET also has a maximum total power dissipation of 33W, and a maximum repetitive avalanche energy rating of 3.9 mJ, making it ideal for switching applications.

The 2SK3820-DL-1E has an extremely low input capacitance of 1.5pF, which makes it suitable for applications in high-frequency switching, such as voice-operated switch (VOS) utilising a microphone as a signal source. Its low capacitance also makes it suitable for logic circuits, analog signal processing and high-performance pulse-circuit applications.

The applications of the 2SK3820-DL-1E MOSFET include high-speed power switching applications, such as motor control, power converters, power supplies, and switching regulators. It can also be used for applications such as power MOSFET gate drivers, high frequency amplifiers, and logic circuit applications.

The working principle of the 2SK3820-DL-1E MOSFET is based on the principle of electron flow between a source and a drain. The source supplies the electrons to the MOSFET, and the gate is used to control the flow of electrons. When the gate voltage is low, the electron flow is blocked and the MOSFET is in its OFF state. When the gate voltage is increased, the electrons begin to flow between the source and the drain and the MOSFET is in its ON state.

The 2SK3820-DL-1E is well-suited for many applications and is an excellent choice for high-speed power switching designs. With its ultra-low threshold voltage and input capacitance, it is well-suited for applications in multiple industries, such as motor control and power converters. Its robust design, high power rating, and high-performance pulse circuit capabilities make it a great choice for many types of designs.

The specific data is subject to PDF, and the above content is for reference

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