Allicdata Part #: | 2SK3748-1EOS-ND |
Manufacturer Part#: |
2SK3748-1E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 1500V 4A TO-2PF-3 |
More Detail: | N-Channel 1500V 4A (Ta) 3W (Ta), 65W (Tc) Through ... |
DataSheet: | 2SK3748-1E Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | SC-94 |
Supplier Device Package: | TO-3PF-3 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 65W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 790pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7 Ohm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
Drain to Source Voltage (Vdss): | 1500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The 2SK3748-1E MOSFET is a single type of transistor, in the field of FETs and MOSFETs. It is most generally used in the field of circuit switching, particularly when a low on-state resistance and high input impedance is desired. It also provides decent blocking voltage and low power consumption, making it a good choice in many applications.
The device is constructed by allowing a current to flow from the source to drain, across an insulated gate. The gate is then insulated from the channel, which allows the current to pass, and the switches between two distinct transconductance states.
The 2SK3748-1E has an on-resistance of 5.4 ohms and a maximum of 1.4 volts for the gate-source voltage. It also has a blocking voltage of 200 volts, allowing it to prevent any backflow from the drain to the source, thus protecting any further components in the circuit. Finally, its gate capacitance is 28.5 pF, which allows it to use relatively low frequency signals.
The advantages of the 2SK3748-1E include its low noise level when compared to other MOSFETs, as well as its low on-state resistance, high input impedance and low power consumption. This makes it suitable for many different applications, including high-speed switching and voltage control.
The device is also thermally efficient, meaning that it dissipates less heat and can operate at higher temperatures. This makes it suitable for use in high power applications, which require a higher voltage than is typically available. Furthermore, the device has excellent reliability and is highly resistant to corrosion, making it ideal for use in circuits with a long lifespan.
Due to its excellent characteristics, the 2SK3748-1E is used in a variety of industries, from automotive to medical electronic applications. It is often used in the switching applications of motors and displays, as well as for audio switching and power management. In medical devices, the device is used for blood pressure monitoring, heart rate monitoring and defibrillation, among other applications.
Overall, the 2SK3748-1E is a reliable and efficient MOSFET, with a low on-state resistance and high input impedance. Its robust construction and thermally efficient design make it suitable for a wide array of applications, especially where high power levels are desired. Its excellent characteristics provide users with a dependable and reliable solution for various applications, from everyday electronics to medical applications.
The specific data is subject to PDF, and the above content is for reference
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