2SK3476(TE12L,Q)

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2SK3476 (TE12L,Q) is a vertical N-channel MOSFET (VNMOSFET) designed for use in high-frequency and high-speed applications such as radio frequency (RF) power amplifiers, low noise amplifiers (LNA) and low noise blocks (LNB). It is primarily used for linear and wideband amplification, switching, and biasing, making it an excellent choice for a wide range of RF and high-speed applications.

The 2SK3476 has an extended and low temperature range of -55 to +150 up Celsius, making it ideal for applications involving extreme temperatures. It has a high drain-source breakdown voltage of 130V, a low on-resistance of 2Ω and a very low gate-source capacitance of 0.1pF. Additionally, the device has a low threshold voltage and a +50V high operating voltage.

The 2SK3476 is available in a through-hole, TO-220 package that is simple to install and use. Its performance characteristics such as an exceptionally low gate-source capacitance and excellent thermal properties make it an ideal choice for a variety of RF and high-speed applications.

The 2SK3476 has many features that make it ideal for high-frequency and high-speed applications, including a low threshold voltage, a high drain-source breakdown voltage, a low on-resistance, and an excellent temperature range. Additionally, its small size and low gate-source capacitance make it ideal for use in demanding RF and high-speed applications that require a device with extremely fast switching times.

The 2SK3476 is designed to work by allowing electrons to flow between a source and a drain. A small voltage applied to the gate terminal varying from -3V to +20V will control the current flowing between the source and the drain. The higher the gate voltage, the higher the current flows between the source and drain. This MOSFET is also capable of working as a switch—the currents between source and drain can be switched on and off with a low gate-source voltage.

In addition to its ideal characteristics for RF and high-speed applications, the 2SK3476 is also perfect for use in wide-band applications. Its low gate-source capacitance and low threshold voltage enable it to perform with excellent stability over a wide range of frequencies. In addition, the device has a low on-resistance, which ensures that the signal will remain strong at high frequencies.

The 2SK3476 MOSFET provides a wide range of features and performance specifications that make it ideal for a variety of applications including linear and wide-band amplification, switching, and biasing. Its low temperature range, high drain-source breakdown voltage, low on-resistance, and low gate-source capacitance make it the perfect choice for demanding RF and high-speed applications.

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