Allicdata Part #: | 2SK3388(TE24L,Q)-ND |
Manufacturer Part#: |
2SK3388(TE24L,Q) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 250V 20A SC-97 |
More Detail: | N-Channel 250V 20A (Ta) 125W (Tc) Surface Mount 4-... |
DataSheet: | 2SK3388(TE24L,Q) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 250V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 105 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4000pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 125W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 4-TFP (9.2x9.2) |
Package / Case: | SC-97 |
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2SK3388 is a type of N-channel silicon insulated gate field effect transistor (IGFET). It belongs to the single FETs and MOSFETs, and can be found in various applications for small-power switching and speed control. This article will discuss the application fields and working principles of the 2SK3388 FET.
2SK3388 owns a low on-resistance of 1.7 ohms at 10V, making it an excellent choice when controlling high power devices. It can be used in switching machines, telecommunications, measuring equipment, automotive devices, and home appliances. Some applications may include large-power motors, solid state relays, power switching, and AC/DC converters. In these role, a 2SK3388 can efficiently transfer power regardless of power supply voltage.
However, the 2SK3388 is not limited to just these applications. In lighter duty tasks, it can be used to sample signals, regulating video signals, and amplifying high-frequency signals. Due to its small size and low price-point, the 2SK3388 is a popular choice for many electronic boards.
The inner workings of a 2SK3388 adheres to the fundamental design of the FET family. When voltage is applied to the gate-source, electrons in the channel begin to move, creating a current when the channel is connected to a power source. This current is blocked when the voltage falls to less than the threshold voltage. Thus, the 2SK3388 can be used to control the magnitude of the current and speed of transfer by managing the voltage supply to the gate.
The design and structure of the 2SK3388 also plays a major role on its performance. It has a well-designed field effect region that ensures switching speed and low on-resistance. It also contains a highly refined silicon layer for increased reliability, ensuring longer product lifetimes. Moreover, since the 2SK3388 is insulated-gate, it does not generate too much heat, making it more energy efficient.
Overall, the 2SK3388 is an incredibly versatile FET suitable for a variety of electronic devices. Thanks to its efficient design and smart structure, it can handle high power devices such as large motors and solid state relays while still being able to sample and amplify signals at its lower tier. With its low on-resistance, long product lifetime, and energy efficiency, the 2SK3388 is an electro-mechanical engineer’s best choice.
The specific data is subject to PDF, and the above content is for reference
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