2SK3004 Allicdata Electronics
Allicdata Part #:

2SK3004-ND

Manufacturer Part#:

2SK3004

Price: $ 1.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Sanken
Short Description: MOSFET N-CH 250V TO-220F
More Detail: N-Channel 250V 18A (Ta) 35W (Tc) Through Hole TO-2...
DataSheet: 2SK3004 datasheet2SK3004 Datasheet/PDF
Quantity: 1000
4000 +: $ 0.94874
Stock 1000Can Ship Immediately
$ 1.06
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 250 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
FET Feature: --
Power Dissipation (Max): 35W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack
Description

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The 2SK3004 is a MOS Field Effect Transistor (FET) designed and manufactured by NEC. The device is designed primarily to control currents in the output stage of audio and other equipment. It is a single-gate N-channel FET that is used in applications where high speed, low on-resistance and low voltage are important.The 2SK3004 is composed of a source and a drain, as well as a gate. The source is the electrode from which an electrical current flows out of the transistor, while the other two electrodes (drain and gate) are used to control the flow of current. In order for the FET to start operating, a voltage needs to be applied to the gate. This voltage is referred to as the "gate-source" voltage, and it is this voltage that determines the resistance between the source and the drain.The working principle of the 2SK3004 is based on the fact that when a voltage is applied to the gate, it creates an electric field which affects the transistor’s channel. This electric field can be manipulated to either increase or decrease the resistance between the source and the drain, depending on the magnitude of the gate-source voltage. With a higher gate-source voltage, the electric field becomes stronger, increasing the resistance between the source and the drain. Similarly, with a lower gate-source voltage, the electric field is weaker, and the resistance decreases.The 2SK3004 has a relatively low threshold voltage of only 4 volts and can handle voltages up to 125 volts. It also has an on-state resistance of only 0.025 ohms, making it one of the most efficient FETs available. The combination of low threshold voltage and low on-state resistance makes the 2SK3004 suitable for applications where high speed, low voltage, and low on-resistance are important. The 2SK3004 is particularly well-suited for application in voltage regulators, audio amplifiers, and audio-switching circuits. It is also suitable for use in Class D and Class E audio amplifiers, as it can handle high switching speeds without compromising sound quality. It is also well-suited for use in switching power supplies, motor control systems, and signal processing circuits.In summary, the 2SK3004 is a high-performance, single gate N-channel FET that is suitable for use in applications where high switching speed, low voltage, and low on-resistance are important. The combination of its low threshold voltage and low on-state resistance makes it ideal for use in audio equipment, switching power supplies, motor control systems, signal processing circuits, and voltage regulators.

The specific data is subject to PDF, and the above content is for reference

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