| Allicdata Part #: | 2SK3047-ND |
| Manufacturer Part#: |
2SK3047 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Panasonic Electronic Components |
| Short Description: | MOSFET N-CH 800V 2A TO-220D |
| More Detail: | N-Channel 800V 2A (Tc) 2W (Ta), 30W (Tc) Through H... |
| DataSheet: |  2SK3047 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 5V @ 1mA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220D-A1 |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 2W (Ta), 30W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 20V |
| Vgs (Max): | ±30V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 7 Ohm @ 1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
| Drain to Source Voltage (Vdss): | 800V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Bulk |
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The 2SK3047 is a n-channel enhancement type silicon gate power FET (Field Effect Transistor). It is produced by Toshiba Corporation, a leading electronics company in Japan. The 2SK3047 is one of the most widely used FETs, especially in power amplifiers designed for high speed switching.
The 2SK3047 is a type of silicon FET that uses an external gate voltage to control the current flow through the channel. The external gate voltage applied to the FET affects the threshold voltage across the channel. When the external gate voltage is greater than the threshold voltage, the FET is in the enhancement mode and allows current to flow through the device. When the gate voltage is less than the threshold voltage, the FET is in the cut-off mode and no current is allowed to pass through the device.
The main application of the 2SK3047 is in audio power amplifier circuits. It can be used to provide high power amplification of audio signals. It has a low on-resistance which helps to reduce the amount of power loss in the circuit. The FET is also widely used in high speed switching circuits where fast switching times are needed. The FET can switch at a frequency of up to 150 MHz and can be used in applications such as frequency dividers and switching networks.
The working principle of the 2SK3047 is that when the gate voltage applied to the device is greater than the threshold voltage, the device is in the enhancement mode and current will flow through the channel. When the gate voltage is less than the threshold voltage, the device is in the cut-off mode and no current will flow through the channel.
The 2SK3047 is a widely used FET that has many applications in audio power amplifiers and high speed switching circuits. It is an enhancement type silicon gate power FET that is controlled by an external gate voltage. When the gate voltage applied to the device is greater than the threshold voltage, the device is in the enhancement mode and current will flow through the channel. When the gate voltage is less than the threshold voltage, the device is in the cut-off mode and no current is allowed to pass through the device.
The specific data is subject to PDF, and the above content is for reference
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