AO4419_003

AO4419_003 is a logic level N-channel MOSFET (metal–oxide–semiconductor field-effect transistor). In terms of structure, a MOSFET is composed of a source, a drain and a gate which are connected to each other by semiconductor material. When the gate is connected with ground, the MOSFET is in the OFF state. When the gate potential is positive (at least 2volt above the source voltage), the MOSFET is in the ON state.

Application Field

AO4419_003 is typically used in DC/DC converters, buck converters, boost converters, half bridge power supplies, motor control circuits and other power switching circuits. The application fields include Automotive, medical, display, mobile, and industrial fields.

Working Principle

At the heart of a MOSFET is a semiconductor material such as silicon. The silicon has N type regions, P type regions and an insulating layer (Gate dielectric layer) between them. The N type region is called the source and the P type region is called the drain. The gate region is on top of the Gate dielectric layer and is separated from the N and P type regions. When the gate voltage is applied, the electrons present in the N type region are attracted to the Gate dielectric layer and a high concentration of electrons is created at the interface between the Gate dielectric layer and the N type region. This high concentration of electrons at the interface forms a conducting channel between the source(N type region) and the drain (P type region). When an electric current flows through this conducting channel, the MOSFET goes into the ON state and the Vgs( gate–source voltage) drops to 0v.

When the gate voltage is removed, the electrons present in the N type region are attracted back to the N type region. This removes the conducting channel between the source(N type region) and the drain (P type region). Since there is no conducting channel between the source(N type region) and the drain (P type region), the MOSFET goes into theOFF state and the Vgs (gate–source voltage) increases to the gate voltage.

Advantages of the AO4419_003

This device has the following advantages over other MOSFETs:

• Low gate drive power
• Logic-level gate threshold
• Gate-source/drain breakdown voltage: -20V to 20V
• Low on-resistance
• Fast switching speed
• Low gate charge
• High blocking voltage

AO4419_003 is an ideal choice for DC/DC converters, buck converters, boost converters, half bridge power supplies and motor control circuits, which require low gate drive power, logic-level gate threshold, low on-resistance and fast switching speed.

Conclusion.

AO4419_003 is a logic level N-channel MOSFET which is typically used in DC/DC converters, buck converters, boost converters, half bridge power supplies, motor control circuits and other power switching circuits. It has the advantages of low gate drive power, logic-level gate threshold, low on-resistance, fast switching speed and low gate charge. It is an ideal choice for DC/DC converters, buck converters, boost converters, half bridge power supplies and motor control circuits.