| Allicdata Part #: | AO4443-ND |
| Manufacturer Part#: |
AO4443 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET P-CH 40V 6A 8SOIC |
| More Detail: | P-Channel 40V 6A (Ta) 3.1W (Ta) Surface Mount 8-SO... |
| DataSheet: |  AO4443 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 2.6V @ 250µA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SOIC |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.1W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1175pF @ 20V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 42 mOhm @ 6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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AO4443 application field and working principle
AO4443 is a high-performance enhancement-mode Field Effect Transistor (FET) which has been fabricated using an advanced high-voltage CMOS process. This device has been designed to provide customers with low RDS on, very low gate charge and very low Total Gate Charge (Q G ). It is ideal for both synchronous and asynchronous applications, and can be used in low-voltage and low-power applications such as DC/DC buck converters, adjustable current sources, and motor drivers. This device can be used in a wide range of applications due to its high-voltage and current handling capabilities.The AO4443 is a high-voltage CMOS FET which utilizes an enhancement-mode technology. The device has a breakdown voltage of 1500V and is designed for use in high-voltage, low-power applications. The gate is protected by a Zener diode for overload protection, and the device features four independent power FETs in a single package. The device is designed for very low on-resistance, very low gate charge, and very low total gate charge (Q G ). The AO4443 FET is designed to provide the user with the maximum performance in high-voltage, low-power applications. The FET is operated through the use of an enhancement-mode technology, which means that it can be turned on or off with a low voltage signal. When the voltage is applied to the gate, it creates an inverted channel, which creates an electron current. This current is then amplified by the FET in order to drive the load. The AO4443 FET can be used in a variety of applications, including switching applications, current-sourcing applications, and motor drives. The device can also be used in DC/DC converters, adjustable current sources, and other high-performance applications. In addition, the device has a wide operating temperature range and is designed for reliable operation in harsh environments. The AO4443 has been designed to provide customers with maximum performance in low-voltage and low-power applications. This FET is ideal for both synchronous and asynchronous applications, and is designed for reliable operation in harsh environments. The device has a wide operating temperature range, and is able to provide customers with low RDS on, very low total gate charge (Q G ), and very low gate charge. Additionally, the device can be used in a variety of applications, including switching applications, current sourcing applications, and motor drives.The specific data is subject to PDF, and the above content is for reference
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