AO4435 Allicdata Electronics

AO4435 Discrete Semiconductor Products

Allicdata Part #:

785-1030-2-ND

Manufacturer Part#:

AO4435

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET P-CH 30V 10.5A 8SOIC
More Detail: P-Channel 30V 10.5A (Ta) 3.1W (Ta) Surface Mount 8...
DataSheet: AO4435 datasheetAO4435 Datasheet/PDF
Quantity: 15000
Stock 15000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 14 mOhm @ 11A, 20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 20V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The AO4435 is a P-Channel MOSFETs (metal oxide semiconductor field-effect transistors) designed for high performance power management applications. It is a medium voltage, high-current, high-speed power MOSFET featuring a low on-resistance and fast switching capability, making it ideal for use in a wide range of applications from power management to high speed switching.

The AO4435 has many features that make it suitable for a wide range of applications. It can be used as a switch in power management applications as it can quickly turn on and off with very low on-resistance. It can also be used in high-speed switching applications as its fast switching time makes it ideal for switching large currents at high speeds. Other applications include motor controller, amplifier, power supply, and many more.

The AO4435 is a true enhancement-mode MOSFET with a low total gate charge (including drain-gate capacitance) that provides low switching losses and high efficiency in power management applications. It also has a low reverse transfer capacitance which reduces cross-over distortion in audio and power line applications.

The working principle of the AO4435 is based on the metal-oxide-semiconductor field-effect transistor (MOSFET) structure. A MOSFET is built from two metal-oxide layers that are separated by a thin insulator (the gate oxide layer). When the source voltage is applied to the source terminal, the electric field formed between the metal-oxide layers causes a current to flow between the source and drain terminals, thus activating the device. The gate voltage can be used to control the current flow, thus allowing the device to be used as a switch.

The AO4435 is an ideal device for power management applications as it can quickly turn on and off with very low on-resistance. It can also be used as an amplifier with high performance, as it has low reverse transfer capacitance and low total gate charge. Its fast switching speed makes it suitable for high-speed switching applications.

In conclusion, the AO4435 is an excellent choice for power management, audio amplifier and high-speed switching applications. It features low on-resistance, low total gate charge, low reverse transfer capacitance and fast switching speed, making it a good option for these applications.

The specific data is subject to PDF, and the above content is for reference

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