AON6226 Allicdata Electronics
Allicdata Part #:

AON6226-ND

Manufacturer Part#:

AON6226

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CHANNEL 100V 48A 8DFN
More Detail: N-Channel 100V 48A (Tc) 108W (Tc) Surface Mount 8-...
DataSheet: AON6226 datasheetAON6226 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Package / Case: 8-PowerSMD, Flat Leads
Supplier Device Package: 8-DFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 108W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3130pF @ 50V
Vgs (Max): ±20V
Series: AlphaSGT™
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Description

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AON6226 is a small trench gate field-effect transistor (FET) with n-channel enhancement mode and low current. It is mainly used for driving, switching and SOI switch application. This FET has the advantages of wide accessible, low cost, and low threshold voltage. So, AON6226 is widely used in modern electronic circuits among many types of transistors. This article will discuss the application field and working principles of AON6226

Applications

AON6226 is mainly used in two kinds of applications. The first one is power FETs and the second one is logic incorporating FETs. The power FETs can be used in power management, motor control, audio and visual inputs, amplifier and power transistor applications. In these applications, this FET is mainly used for voltage gain or current control. The other application is to create logic circuits and designs. This FET can incorporate logic functions such as OR, AND, XOR, and D-type flip-flop. These logic functions can be used for creating complex circuits and designs.

AON6226 can also be used for the development of analog circuits. This FET can be used for oscillation, amplification, switching and voltage control circuits. This FET is also useful for RF and microwave circuits, as well as low frequency amplifier applications. This FET is also often used in analog applications where a high frequency signal is needed, such as radio systems and cellular communication. This is because this FET can provide high frequency signals with low noise.

In addition to analog and logic circuits, AON6226 can also be used for telecommunications, automotive, computer, audio, and military applications. This FET is often used in noise and RF attenuators, line drivers, filters, and power surge suppressors. This is because this FETs can operate at high speed and handle high frequency signals with low noise.

Working Principle

AON6226 is a n-channel enhancement mode FET. This means that the drain and source terminals of this FET are connected through an oxide layer. Unlike other FETs, AON6226 is not normally operated in saturation mode. This means that the current flow between the drain and source is controlled by the external circuitry. This FET has a wide range of gate voltage that can control both the on and off states of the FET. The capacitance between the drain and source of this FET is also high, allowing for the FET to have a high frequency response.

The working principle of AON6226 can be explained in two parts. When the gate terminal of this FET is in “on” state, it allows electrons to flow from the source terminal to the drain terminal. This results in a current flow between the drain and source. When the gate terminal of this FET is in “off” state, no electrons will flow between the source and drain. This results in no current flow between the drain and source.

AON6226 has the advantage of wide application field and fast operation speed. It can be used in a variety of applications due to its wide voltage range and high frequency response. In addition, this FET is small in size and low in cost. This makes it an ideal choice for creating complex circuits and designs.

The specific data is subject to PDF, and the above content is for reference

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