APTM100A13DG Allicdata Electronics
Allicdata Part #:

APTM100A13DG-ND

Manufacturer Part#:

APTM100A13DG

Price: $ 109.56
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 2N-CH 1000V 65A SP6
More Detail: Mosfet Array 2 N-Channel (Half Bridge) 1000V (1kV)...
DataSheet: APTM100A13DG datasheetAPTM100A13DG Datasheet/PDF
Quantity: 1000
100 +: $ 99.59390
Stock 1000Can Ship Immediately
$ 109.56
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 65A
Rds On (Max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6
Description

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APTM100A13DG Application Field and Working Principle

APTM100A13DG is a type of advanced field-effect transistor (FET) commonly used in electronics applications today. It is an array of transistors that can be used to amplify or switch an electrical signal. The array consists of several transistors, which can be either MOSFETs (metal-oxide-semiconductor) or JFETs (junction field-effect). By using two types of transistors, it is possible to create an array of transistors with specifically tailored properties. For example, one type of transistor can be used to create a low-noise amplifier, while the other can be used to create a high-bandwidth amplifier.

The APTM100A13DG can be used in a wide range of applications, ranging from cellular phones to medical equipment. It has a low on-resistance, which makes it ideal for regulating high-current applications like power supplies. In addition, it is durable and reliable, making it a popular choice for high-reliability or radiation-resistant applications. It is also a suitable choice for high-temperature applications due to its ability to operate up to 150°C.

Working Principle

The APTM100A13DG is a field-effect transistor (FET) that can be used to amplify or switch electrical signals. The FET consists of two terminals for inputting and outputting current, and a semiconductor channel, or gate, between the terminals. When a voltage is applied to the gate, it creates an electric field that modifies the conductivity of the semiconductor channel. Depending on the voltage, the channel can either be made to conduct more current, less current, or remain completely blocked off.

The APTM100A13DG is composed of several transistors, which each have their own terminals and gate. The signal input is applied to one of the gates, and the amplified or switched signal is output from the corresponding terminal. The FET array also features a gate-voltage control pin, which can be used to modify the amount of current flowing through each gate. This provides the user with greater flexibility in controlling the signal.

The APTM100A13DG is a versatile and reliable transistor array suitable for a variety of electronic applications. It is designed to provide high levels of performance and accuracy, making it an ideal choice for precision applications. It is also durable and resistant to radiation and high temperatures, making it a great choice for high-performance and high-reliability applications.

The specific data is subject to PDF, and the above content is for reference

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