Allicdata Part #: | APTM100DA18TG-ND |
Manufacturer Part#: |
APTM100DA18TG |
Price: | $ 47.14 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH 1000V 43A SP4 |
More Detail: | N-Channel 1000V 43A (Tc) 780W (Tc) Chassis Mount S... |
DataSheet: | APTM100DA18TG Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 42.84980 |
Vgs(th) (Max) @ Id: | 5V @ 5mA |
Package / Case: | SP4 |
Supplier Device Package: | SP4 |
Mounting Type: | Chassis Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 780W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 10400pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 372nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 210 mOhm @ 21.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 43A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Bulk |
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The APTM100DA18TG is a high-performance N-channel MOSFET that is used in a wide range of applications. The APTM100DA18TG is a single N-channel MOSFET with a breakdown voltage of 18 volts.
This FET is built on the latest advanced process technology, making it smaller and easier to use while still delivering high efficiency and performance. It is ideal for use in a wide range of applications, including audio amplifiers, high-efficiency Power Stages and Protection circuits.
The key performance of the APTM100DA18TG includes a high on-resistivity of 0.100 ohms, an off-state Vds threshold of -4V and an avalanche energy rating of 8.5 mJ.
The APTM100DA18TG is designed to handle high loads with very low gate charge (Qg) and low input capacitance (Ciss). It provides very low on-resistance with excellent dV/dt and di/dt capability. It also has high ESD and surge rating for improved protection.
The working principle of the APTM100DA18TG is based on a “depletion mode MOSFET” mechanism. This device utilises a thin insulating layer of silicon dioxide (SiO2) between the gate and the source/drain bodies. When a positive voltage is applied to the gate, positive charges are attracted onto the SiO2 layer and this establishes an electric field between the source and drain regions. This electric field modulates the electron distribution and results in a current flow - typically, this gate voltage is referred to as the biasing voltage.
The APTM100DA18TG can be used as an amplifier, switch or voltage regulator, depending on the specific application needs. When used as an amplifier, the APTM100DA18TG is designed to provide low output noise, low distortion, and high linearity. When used as a switch, the APTM100DA18TG is designed to provide high switching speed, low delay, and low power dissipation. When used as a voltage regulator, the APTM100DA18TG is designed to provide signal conditioning and power control.
The APTM100DA18TG is an ideal solution for applications requiring low noise, low power consumption and low power dissipation. It is highly reliable and easy to use, making it an excellent choice for a wide range of applications. It is also especially suitable for use in portable, medical and automotive technologies.
The specific data is subject to PDF, and the above content is for reference
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