Allicdata Part #: | APTM20DHM20TG-ND |
Manufacturer Part#: |
APTM20DHM20TG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 2N-CH 200V 89A SP4 |
More Detail: | Mosfet Array 2 N-Channel (Dual) Asymmetrical 200V ... |
DataSheet: | APTM20DHM20TG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Discontinued at Digi-Key |
FET Type: | 2 N-Channel (Dual) Asymmetrical |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 89A |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 44.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 112nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 6850pF @ 25V |
Power - Max: | 357W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP4 |
Supplier Device Package: | SP4 |
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APTM20DHM20TG Application Field and Working Principle
APTM20DHM20TG is an array type of power metal oxide semiconductor field effect transistor (MOSFET). This type of transistor is used in various kinds of applications, such as automotive infotainment, motor control, and distribution converter power supply components.
What is a MOSFET?
MOSFETs are power transistors which control the flow of electricity. They are composed of a semiconductor material and an insulated gate electrode. When a voltage is applied to the gate electrode, it creates a field which either increases or decreases the conduction of electrons between the source and drain electrodes of the transistor. This makes MOSFETs useful for many kinds of devices, such as digital logic gates, computer memory chips, and power supplies.
Features of the APTM20DHM20TG
The APTM20DHM20TG has several features that make it suitable for a range of applications. These features include a very low on-resistance of 0.75 mΩ, adjustable gate voltage control, and fast switching frequency. It also has a high thermal conductivity and low gate charge. The transistor also has a high ripple current handling capability, which means that it can handle a large amount of current without over-heating.
Applications of APTM20DHM20TG
The APTM20DHM20TG can be used in many applications such as DC-DC converters, automotive infotainment systems, motor control, and as power supply components. It can also be used in automotive EV chargers, electronic ballasts, white goods, and solar power systems. The low on-resistance and adjustable gate voltage control make it suitable for applications requiring a high efficiency and fast switching frequency.
Working Principle of APTM20DHM20TG
The working principle of the APTM20DHM20TG is based on the metal oxide semiconductor (MOS) principle. A MOS transistor is composed of two metal electrodes and an insulated gate electrode. When a voltage is applied to the gate electrode, it creates an electric field which increases or decreases the conduction of electrons between the two metal electrodes. This ability to control the flow of electrons makes the MOS transistor an ideal choice for power management applications.
When the voltage is applied to the gate electrode, it generates an electric field which attracts the electrons from the negative source and repels those from the positive drain. This creates a voltage difference between the drain and source, known as the ‘channel voltage’, that allows a current to flow through the transistor. This current flow is then modulated to control the power being supplied to the circuit.
Conclusion
The APTM20DHM20TG is a power MOSFET which is used for various automotive, power management, and white goods applications. It is composed of two metal electrodes and an insulated gate electrode which creates an electric field when a voltage is applied. This turns the transistor on and off, allowing a current to flow through the circuit. The devices low on-resistance and adjustable gate voltage control enable it to be used in devices which require high efficiency and fast switching frequencies.
The specific data is subject to PDF, and the above content is for reference
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