Allicdata Part #: | APTM50HM75SCTG-ND |
Manufacturer Part#: |
APTM50HM75SCTG |
Price: | $ 84.63 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 4N-CH 500V 46A SP4 |
More Detail: | Mosfet Array 4 N-Channel (H-Bridge) 500V 46A 357W ... |
DataSheet: | APTM50HM75SCTG Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 76.93630 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | 4 N-Channel (H-Bridge) |
FET Feature: | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 46A |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 23A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 123nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 5590pF @ 25V |
Power - Max: | 357W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP4 |
Supplier Device Package: | SP4 |
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The APTM50HM75SCTG is a monolithic integrated circuit Array of N-Channel metal oxide silicon field effect transistors (MOSFETs) in a plastic package using Trench MOSFET technology. This type of MOSFET array, commonly referred to as a power MOSFET, is typically used in high power applications such as motor control, power supplies and audio amplifiers. The APTM50HM75SCTG is designed to enhance switching performance and temperature stability while providing excellent protection against thermal runaway.
MOSFETs are unipolar devices, meaning they only require a single supply voltage. They are typically constructed of two N-channel MOSFETs in a common source configuration, which provides both an input (gate) and an output (drain). The gate operates by controlling the flow of current between the output and the input. When the gate voltage is lower than the source voltage (i.e. the voltage at the drain is lower than the voltage at the gate), current flows from the drain to the source. Conversely, when the gate voltage is higher than the source voltage, current flows from the source to the drain.
The APTM50HM75SCTG array offers several benefits over other types of MOSFETs. The device has a low parasitic inductance, which reduces current starvation, a low on-resistance for high efficiency, and abundant information printed on the device to ease system design. The package also offers minimal thermal dissipation, allowing for lower thermal stress when switching on and off, and enhanced electrical performance characteristics. In addition, the array has a built-in overcurrent protection function, which helps to prevent damage to the device resulting from current exceeding the design level.
The APTM50HM75SCTG is well suited to a variety of power applications. For example, it can be used in power supplies to control the flow of electrical energy and regulate the voltage output. It can also be used in motor control applications, providing for the efficient switching of power and protection against overcurrent loads. Finally, the device can be used in audio amplifier applications, where its low on-resistance, high current carrying capacity and high switching speed is ideal for sound reproduction.
The APTM50HM75SCTG is a versatile and efficient MOSFET array for use in many high-power applications. The device\'s low parasitic inductance, low on-resistance, and overcurrent protection function ensures reliable operation and performance. It is well suited for use in power supplies, motor control applications, and audio amplifier applications.
The specific data is subject to PDF, and the above content is for reference
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