APTM20SKM05G Allicdata Electronics
Allicdata Part #:

APTM20SKM05G-ND

Manufacturer Part#:

APTM20SKM05G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH 200V 317A SP6
More Detail: N-Channel 200V 317A (Tc) 1136W (Tc) Chassis Mount ...
DataSheet: APTM20SKM05G datasheetAPTM20SKM05G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 5V @ 10mA
Package / Case: SP6
Supplier Device Package: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 1136W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 6 mOhm @ 158.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 317A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

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The APTM20SKM05G is a single transistor MOSFET from NXP Semiconductors which is a global semiconductor manufacturer. The transistor is a 20V, 0.029Ω, 200mA SuperFET MOSFET. It has a very low input capacitance and a low RDS(on) resistance making it suitable for a wide variety of power switching applications.

The APTM20SKM05G is a single Toshiba MOSFET which uses silicon-oxide-nitride-oxide-silicon (SiON) technology to create an advanced power switching system. This SiON technology is used to create a low-threshold voltage transistor with a very low RDS(on). This helps reduce power dissipation and losses that could occur when switching high-power loads. The transistor also has low gate charge which helps reduce ringing when switching high-power loads.

The APTM20SKM05G is a single N-channel MOSFET which makes it ideal for using as a power switch. It has a low turn-on voltage, making it suitable for use in applications such as DC-DC converters, motor drivers, and power management systems. The device can also be used for RF power amplification as it has a low gate threshold voltage. This allows for low power switching with a low noise floor, making it suitable for use in radio frequency amplification applications.

The main application fields of the APTM20SKM05G are in power management systems, motor drivers, and DC-DC converters. The device can also be used in radio frequency applications due to its low gate threshold voltage.

The working principle of the APTM20SKM05G is based on the physical characteristics of the MOSFET device. The device works by allowing current to flow across the MOSFET channel when the gate voltage is higher than the threshold voltage. When this happens, the MOSFET acts as a switch and turns on current flow from the drain to the source. This allows current to be switched on and off according to the voltage applied at the gate.

When the gate voltage is lower than the threshold voltage, the MOSFET acts as an open switch and no current flows. This helps protect against short circuit failures and allows for precise control over the amount of current flowing through the device.

The APTM20SKM05G is an excellent MOSFET for power switching applications. It has a low input capacitance and a low RDS(on) making it ideal for power switching applications. Its SiON technology helps reduce power losses when switching high-power loads and its low gate threshold voltage makes it suitable for use in radio frequency applications. This makes the device ideal for use in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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