
Allicdata Part #: | APTM120H29FG-ND |
Manufacturer Part#: |
APTM120H29FG |
Price: | $ 155.84 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 4N-CH 1200V 34A SP6 |
More Detail: | Mosfet Array 4 N-Channel (H-Bridge) 1200V (1.2kV) ... |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 141.67200 |
Series: | POWER MOS 7® |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | 4 N-Channel (H-Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: | 34A |
Rds On (Max) @ Id, Vgs: | 348 mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: | 374nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 10300pF @ 25V |
Power - Max: | 780W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP6 |
Supplier Device Package: | SP6 |
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APTM120H29FG is one of the latest power MOSFET arrays designed for automotive and industrial applications. The MOSFET array consists of eight MOSFETs arranged in a cyclic arrangement, each with its own gate, drain and source. The device is designed to withstand a wide temperature range of -40°C to +125°C and features high-voltage operation up to 650V and a low on-state resistance of 7mΩ. The excellent off-state characteristics of the APTM120H29FG array make it a highly reliable and efficient choice for applications requiring fast switching times and low power losses.
The APTM120H29FG is suitable for use in applications such as motor control and electromechanical drive systems. The power MOSFET array can be used to control the speed and torque of the motor by switching the inputs from the controller. The array’s low on-state resistance helps reduce power losses and the noise level during switching. The device’s wide temperature range and high-voltage operation make it suitable for use in harsh environments.
The working principle of the APTM120H29FG array is based on the MOSFETs’ ability to block or conduct current between the drain and source when a voltage is applied to the gate. In the array, the MOSFETs are arranged in a cyclic arrangement, with each MOSFET acting as a single unit. The gate, drain and source terminals of each MOSFET are connected to each other, allowing current to pass from one MOSFET to another in the array.
In the off-state, the APTM120H29FG array is non- conducting, with no current conducted between the drain and source. When the gate voltage is increased, the MOSFETs become conducting and current flows from the source to the drain. The device’s on-state resistance is determined by the voltage applied to the gate. The device’s ability to rapidly switch between on and off states makes it suitable for applications requiring fast switching times.
The APTM120H29FG is a reliable device, capable of withstanding harsh operating conditions. The device’s low on-state resistance and wide temperature range make it an efficient choice for motor control and electromechanical drive systems. The device’s ability to switch rapidly and low power losses make it a good choice for applications requiring quick and accurate control over motor speed and torque.
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