APTM120H29FG Allicdata Electronics
Allicdata Part #:

APTM120H29FG-ND

Manufacturer Part#:

APTM120H29FG

Price: $ 155.84
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 4N-CH 1200V 34A SP6
More Detail: Mosfet Array 4 N-Channel (H-Bridge) 1200V (1.2kV) ...
DataSheet: APTM120H29FG datasheetAPTM120H29FG Datasheet/PDF
Quantity: 1000
100 +: $ 141.67200
Stock 1000Can Ship Immediately
$ 155.84
Specifications
Series: POWER MOS 7®
Packaging: Bulk 
Part Status: Active
FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 34A
Rds On (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
Power - Max: 780W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6
Description

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APTM120H29FG is one of the latest power MOSFET arrays designed for automotive and industrial applications. The MOSFET array consists of eight MOSFETs arranged in a cyclic arrangement, each with its own gate, drain and source. The device is designed to withstand a wide temperature range of -40°C to +125°C and features high-voltage operation up to 650V and a low on-state resistance of 7mΩ. The excellent off-state characteristics of the APTM120H29FG array make it a highly reliable and efficient choice for applications requiring fast switching times and low power losses.

The APTM120H29FG is suitable for use in applications such as motor control and electromechanical drive systems. The power MOSFET array can be used to control the speed and torque of the motor by switching the inputs from the controller. The array’s low on-state resistance helps reduce power losses and the noise level during switching. The device’s wide temperature range and high-voltage operation make it suitable for use in harsh environments.

The working principle of the APTM120H29FG array is based on the MOSFETs’ ability to block or conduct current between the drain and source when a voltage is applied to the gate. In the array, the MOSFETs are arranged in a cyclic arrangement, with each MOSFET acting as a single unit. The gate, drain and source terminals of each MOSFET are connected to each other, allowing current to pass from one MOSFET to another in the array.

In the off-state, the APTM120H29FG array is non- conducting, with no current conducted between the drain and source. When the gate voltage is increased, the MOSFETs become conducting and current flows from the source to the drain. The device’s on-state resistance is determined by the voltage applied to the gate. The device’s ability to rapidly switch between on and off states makes it suitable for applications requiring fast switching times.

The APTM120H29FG is a reliable device, capable of withstanding harsh operating conditions. The device’s low on-state resistance and wide temperature range make it an efficient choice for motor control and electromechanical drive systems. The device’s ability to switch rapidly and low power losses make it a good choice for applications requiring quick and accurate control over motor speed and torque.

The specific data is subject to PDF, and the above content is for reference

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