APTM10HM05FG Allicdata Electronics
Allicdata Part #:

APTM10HM05FG-ND

Manufacturer Part#:

APTM10HM05FG

Price: $ 120.23
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 4N-CH 100V 278A SP6
More Detail: Mosfet Array 4 N-Channel (H-Bridge) 100V 278A 780W...
DataSheet: APTM10HM05FG datasheetAPTM10HM05FG Datasheet/PDF
Quantity: 1000
100 +: $ 109.30200
Stock 1000Can Ship Immediately
$ 120.23
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 278A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 125A, 10V
Vgs(th) (Max) @ Id: 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
Power - Max: 780W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6
Description

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The APTM10HM05FG is a transistor array, part of a family of Field-Effect Transistors (FETs) commonly known as the Mosfets. As such, it is composed of an arrayed group of multiple Independent FETs, each FET packages into a single unit.

FETs are a type of active semiconductor electronics component, in which the flow of current between two terminals is regulated by the application of a varying electrical field. Generally, FETs have three terminals, the source, the drain and the gate. The application of a voltage to the gate difference between the source and the drain, allowing current to pass between the source and the drain.

MOSFETs are a particular type of FET, with common features such as low power consumption, compact size and high switching speed. The APTM10HM05FG is a "Power Metal Oxide Semiconductor Field-effect Transistor Array", a type of MOSFET. It is mainly composed of independent N-channel MOSFETs, and hence, arranged in two columns and five rows. This arrangement contains five N-channel MOSFETs, each with a rated voltage of 15V and a drain-source on-state resistance of 0.2 Ohms.

In terms of its operating principles, the APTM10HM05FG works by applying the voltage to a control terminal gate that acts like a valve, regulating current between a source and drain terminal. Applying a voltage to the gate electrodes creates a magnetic field that influences the electric field in the channel, switching the FET on and off, or in other words, modulating the amount of current that passes between the source and drain.

The APTM10HM05FG is mainly used in motor control, power management and lighting control operations, as it can produce higher power density and higher switching efficiency than a normal MOSFET. Furthermore, compared with the other FETs and MOSFETs, it has the advantage of having fewer parts, allowing it to have a more compact size, lower cost, and easier connection and wiring.

In conclusion, the APTM10HM05FG transistor array is part of the FETs family and is specifically designed to works as a power metal oxide semiconductor field-effect transistor array. It is mainly used in motor control, power management and lighting control operations, as it can produce higher power density and higher switching efficiency than a normal MOSFET. Moreover, it contains fewer parts compared to other FETs and MOSFETs, allowing it to have a more compact size, lower cost, and easier connection and wiring.

The specific data is subject to PDF, and the above content is for reference

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