
Allicdata Part #: | APTM10HM05FG-ND |
Manufacturer Part#: |
APTM10HM05FG |
Price: | $ 120.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 4N-CH 100V 278A SP6 |
More Detail: | Mosfet Array 4 N-Channel (H-Bridge) 100V 278A 780W... |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 109.30200 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | 4 N-Channel (H-Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 278A |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 125A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: | 700nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 20000pF @ 25V |
Power - Max: | 780W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP6 |
Supplier Device Package: | SP6 |
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The APTM10HM05FG is a transistor array, part of a family of Field-Effect Transistors (FETs) commonly known as the Mosfets. As such, it is composed of an arrayed group of multiple Independent FETs, each FET packages into a single unit.
FETs are a type of active semiconductor electronics component, in which the flow of current between two terminals is regulated by the application of a varying electrical field. Generally, FETs have three terminals, the source, the drain and the gate. The application of a voltage to the gate difference between the source and the drain, allowing current to pass between the source and the drain.
MOSFETs are a particular type of FET, with common features such as low power consumption, compact size and high switching speed. The APTM10HM05FG is a "Power Metal Oxide Semiconductor Field-effect Transistor Array", a type of MOSFET. It is mainly composed of independent N-channel MOSFETs, and hence, arranged in two columns and five rows. This arrangement contains five N-channel MOSFETs, each with a rated voltage of 15V and a drain-source on-state resistance of 0.2 Ohms.
In terms of its operating principles, the APTM10HM05FG works by applying the voltage to a control terminal gate that acts like a valve, regulating current between a source and drain terminal. Applying a voltage to the gate electrodes creates a magnetic field that influences the electric field in the channel, switching the FET on and off, or in other words, modulating the amount of current that passes between the source and drain.
The APTM10HM05FG is mainly used in motor control, power management and lighting control operations, as it can produce higher power density and higher switching efficiency than a normal MOSFET. Furthermore, compared with the other FETs and MOSFETs, it has the advantage of having fewer parts, allowing it to have a more compact size, lower cost, and easier connection and wiring.
In conclusion, the APTM10HM05FG transistor array is part of the FETs family and is specifically designed to works as a power metal oxide semiconductor field-effect transistor array. It is mainly used in motor control, power management and lighting control operations, as it can produce higher power density and higher switching efficiency than a normal MOSFET. Moreover, it contains fewer parts compared to other FETs and MOSFETs, allowing it to have a more compact size, lower cost, and easier connection and wiring.
The specific data is subject to PDF, and the above content is for reference
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