APTM120VDA57T3G Allicdata Electronics
Allicdata Part #:

APTM120VDA57T3G-ND

Manufacturer Part#:

APTM120VDA57T3G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 2N-CH 1200V 17A SP3
More Detail: Mosfet Array 2 N-Channel (Dual) 1200V (1.2kV) 17A ...
DataSheet: APTM120VDA57T3G datasheetAPTM120VDA57T3G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: POWER MOS 7®
Packaging: Bulk 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 17A
Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
Description

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APTM120VDA57T3G Application Field and Working Principle

The APTM120VDA57T3G is a transistor array, a type of field effect transistor (FET). It is a three-terminal transducer that uses integrated gate technology to amplify, switch, and regulate electrical signals. The APTM120VDA57T3G array, as with most transistors, is made up of individual components that are connected together to form a single unit. The APTM120VDA57T3G is able to regulate the current between two sets of terminals.

A transistor array is particularly useful when it comes to controlling electrical signals that require multiple components. For example, the APTM120VDA57T3G can be used in electronic systems that need multiple FETs to provide increased signal regulation. By combining multiple FETs into a single unit, the APTM120VDA57T3G array provides a cost effective and efficient solution for signal regulation.

The APTM120VDA57T3G is designed with a variety of applications in mind. It is particularly useful for controlling power circuits, providing precision control of low input signals for signal conditioning, and for signal isolation and protection. This makes it particularly useful for protecting circuits from the power and signal noise that can be generated from other components. It can also provide protection from thermal overloads, voltage spikes, and overcurrents.

The working principle of the APTM120VDA57T3G array is based on its physical structure as an integrated gate device. Each component in the array is constructed as an individual integrated gate transistor. All of the individual transistors are connected together in a specific order, with each of the gate terminals being connected to the source voltage to form the integrated gate device. This allows the APTM120VDA57T3G to act as a single, highly efficient, regulated signal amplifier.

The APTM120VDA57T3G array also features an open-drain design, which allows it to provide signal isolation between it and the rest of the circuit. This means that any signal into the array will not be affected by the rest of the circuit, allowing it to retain signal integrity. Additionally, this open-drain design also allows for signal protection, as it ensures that no other signals will interfere with the signal path.

The APTM120VDA57T3G array is capable of providing a variety of functions, from signal conditioning, to signal isolation and protection, to increased signal regulation. It is an efficient, cost-effective solution for controlling multiple FETs. Its open-drain design allows for signal integrity, and its integrated gate technology makes it extremely powerful. This makes it an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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