APTM100DA33T1G

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APTM100DA33T1G is a type of transistor that belongs to the field-effect transistor (FET) family. It is a single FET device, meaning it has just one gate instead of the normal two used in Junction Field Effect Transistors (JFETs) or Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). This FET device is also known as a Power MOSFET and is used to control both low-level and high-level signals.

An FET device is a type of transistor that works using a voltage applied to the gate to control the flow of a current between the source and drain. It is optimized for the control of low-level analog signals and high-power digital signals and is typically used for power conversion and switching. FETs are available in a variety of sizes and with various performance levels, and the APTM100DA33T1G is one such FET device.

The APTM100DA33T1G is a depletion-mode N-Channel FET device, meaning it is able to switch from an off state to an on state. It has a temperature range between -55°C to 150°C and a transistor maximum power dissipation of 33W. The drain-source break down voltage (Vds) is 100V, while the maximum drain current (I) is 15A. The on-state resistance (RDS (on)) is 1.78mohm, the gate-source threshold voltage (Vgs(th)) is 1.875V and the gate-source voltage (Vgs) is ±20V. The drain charge (Cd) is 938pF, while the capacitance between gate and drain is 595pF.

The APTM100DA33T1G is constructed from silicon, meaning it is an electrically neutral semiconductor, and is designed to be able to withstand high currents and temperatures. It is commonly used in power amplification, motor control, and high-voltage, high-frequency switching applications. It is also used in radar, power supplies, inverters, and DC-DC converters, where reliable high-power switching is required. It has a higher switching frequency than JFETs and can handle higher power than MOSFETs, making it an attractive option for many applications.

In summary, the APTM100DA33T1G is a single FET device from the Power MOSFET family that is ideal for power conversion and switching applications. It has an operating temperature range of -55°C to 150°C, a maximum power dissipation of 33W, a Vds of 100V, and a breakdown voltage of 1.78mohm. The device is constructed from silicon and is commonly used in high-power applications, such as power amplification, motor control, radar, and high-frequency switching. Thanks to its high switching frequency and reliable high-power switching capabilities, the APTM100DA33T1G is an excellent option for many applications.

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