APTM100H18FG

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The APTM100H18FG is a packaged array of single-gate n-type silicon Field Effect Transistors (FETs) that is commonly used in a variety of applications, ranging from voltage regulation to pre-biased gate of integrated circuit chips. Commonly used for high-speed switching, this FET array is part of a larger family of products, including the APTM100H30BB and APT50H18FG.

The APTM100H18FG is characterized by a high on-pulse level at 1.4V and a low off-pulse level at 0.2V, making it a popular choice for circuit boards with both high and low power requirements. It has a maximum gate-source voltage of 8V, which makes it suitable for power levels up to 25A. The low capacitance and low gate resistance allows the FET to switch quickly, making it ideal for applications that require fast switching times.

The APTM100H18FG has a single-gate FET, which means that the gate is only activated when a voltage is applied to the gate electrode. This allows the FET to operate with very little power, making it a more efficient choice for applications that require power regulation. The FET can also be used in combination with other FETs to create dual-selected, multiplexed, or cascaded implementations.

When using the APTM100H18FG, the application designer needs to consider both the input and output characteristics of the FET. The device has two important parameters that need to be considered: the input capacitance and the output impedance. The input capacitance of the FET is the amount of charge that is stored on the gate when a voltage is applied to the gate electrode. The output impedance of the FET is the impedance of the drain current as it passes through the device.

In addition to the input and output characteristics, the FET also has two operational modes: enhancement and depletion. In enhancement mode, a positive voltage applied to the gate increases the conductivity of the device, allowing the device to operate in its highest current state. In depletion mode, a negative voltage applied to the gate decreases the conductivity of the device, reducing its current conduction potential. In both enhancement and depletion modes the FET can handle up to 25A of current.

By utilizing the right combination of input and output characteristics, the FET can be used in a wide range of applications, including voltage regulation, power conversion, pre-bias gate of integrated circuit chips, as well as many other applications. The low capacitance and low gate resistance of the FET also make it well suited for high-speed switching applications, making it a great choice for those looking for high power and performance.

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