Allicdata Part #: | APTM20DHM08G-ND |
Manufacturer Part#: |
APTM20DHM08G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 2N-CH 200V 208A SP6 |
More Detail: | Mosfet Array 2 N-Channel (Dual) Asymmetrical 200V ... |
DataSheet: | APTM20DHM08G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) Asymmetrical |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 208A |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 104A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: | 280nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 14400pF @ 25V |
Power - Max: | 781W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP6 |
Supplier Device Package: | SP6 |
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APTM20DHM08G is a type of MOSFET array, specifically a dual-gated P-type enhancement MOSFET which is suitable for high-speed switching applications. It comes in a eight pin surface mount package, making it easy to embed in a PCB. The dual gate operation gives it the added benefit of high input impedance and high DC gains without the need of additional components.
The MOSFET array consists of two N-channel MOSFETs in a single package, which are connected in parallel. As the gates of both MOSFETs are held at the same potential, there is no gain or loss of current in either of them. The gate voltage however affects the on-resistance of the MOSFET. This implies that the higher the gate voltage, the higher the on-resistance and vice versa.
The gate voltage can be adjusted by an external voltage source or by means of multiple gate inputs to give the desired performance. This makes the APTM20DHM08G particularly suitable for applications where the switching performance needs to be adapted to the requirements of the system.
The most common application field for the APTM20DHM08G is the switching of high-voltage signals with very low losses, such as servos, stepper motors and power inverters. In addition, the MOSFET array can also be used for high-density current monitoring in power systems, allowing the monitoring of power line currents in multiple phases with minimal circuitry.
This device\'s working principle is based on the idea of allowing an electrical charge to flow from an insulated source to an insulated sink when a sufficient voltage is applied to its gate. When a voltage is applied to the gate of the MOSFET, it creates an electric field which permits current to flow between the source and drain electrodes. The higher the gate voltage, the higher the current that will be permitted to pass through the MOSFET.
The APTM20DHM08G is designed to provide high efficiency and low power dissipation in applications where high current and/or high voltage switching is required. Its combination of very low on-resistance and high input impedance makes it particularly suitable for high-speed switching. Moreover, the eight-pin configuration makes it ideal for surface mount applications where PCB space is a limitation. The device also offers protection against electrostatic discharge, making it a reliable component for use in sensitive systems.
The specific data is subject to PDF, and the above content is for reference
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