APTM20DHM16T3G Allicdata Electronics
Allicdata Part #:

APTM20DHM16T3G-ND

Manufacturer Part#:

APTM20DHM16T3G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 2N-CH 200V 104A SP3
More Detail: Mosfet Array 2 N-Channel (Dual) Asymmetrical 200V ...
DataSheet: APTM20DHM16T3G datasheetAPTM20DHM16T3G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: POWER MOS 7®
Packaging: Bulk 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 104A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
Description

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APTM20DHM16T3G is a type of field-effect transistor (FET) array. FETs are one of the main families of transistors, and represent a type of switch or transistor cell that uses an electric field to affect current flow. FETs run on CMOS (complementary metal–oxide–semiconductor) technology, and are commonly used in many electronic devices, from amplifiers to integrated circuits.

APTM20DHM16T3G arrays consist of 16 FET cells, all connected together in a compact package. Each cell has an individual gate or "control" connection, so that each cell can be controlled independently by the user. APTM20DHM16T3G cells are typically found in high-end microprocessors and other advanced circuits, where multiple FETs are needed.

The working principle of APTM20DHM16T3G FET arrays is based on a concept called electric field effect. In this principle, electric fields are used to deflect electrons so that current flow in a circuit can be affected. An electric field is created between the source and the gate of the FET cell, and this electric field is used to control the current flow of the FET. When the gate is open, current can flow freely through the FET. When the gate is closed, the electric field\'s effect causes the electrons to be diverted, which prevents current flow through the FET.

APTM20DHM16T3G FET arrays are used in many applications. They are particularly useful for power management in microprocessors, as they can switch quickly and have low power consumption. In addition, as they have 16 FET cells, they can be used for a variety of tasks that require multiple FETs. Some examples include voltage regulation in power supplies or for providing isolated power to circuits and components. They are also used in high density integrated circuits, and in high-speed digital networks.

APTM20DHM16T3G FET arrays represent a breakthrough in transistor technology and are used in many applications. The working principle of the FET allows for low power consumption, high speed switching and multiple switching capabilities, making it ideal for controlling complex circuits and digital networks.

The specific data is subject to PDF, and the above content is for reference

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