APTM20DUM10TG

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	200V
Current - Continuous Drain (Id) @ 25°C:	175A
Rds On (Max) @ Id, Vgs:	12 mOhm @ 87.5A, 10V
Vgs(th) (Max) @ Id:	5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:	224nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	13700pF @ 25V
Power - Max:	694W
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	SP4
Supplier Device Package:	SP4

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APTM20DUM10TG technology has been increasingly adopted for its versatile applications in various fields. It is a standard Metallurgical-oxide semiconductor Field-Effect Transistor Array (MOSFET array) which integrates MOSFETs with complementary structure into a single package, and can be applied to many integrated circuits.The working principles of APTM20DUM10TG are rather simple. This MOSFET array basically consists of n-type and p-type MOSFETs which have structure, composition and electrical characteristic different from that of bipolar transistors. An array of this type is basically a combination of many integrated FETs and their geometrical arrangements allow for easy and convenient operation of the device.The current compressing properties of such devices are mainly dependent on the ability of MOSFETs to reduce the current flow. This is done by the electronic configuration of the integrated FETs. Every FET is a semiconductor material and has two contacts that are separated by an insulating layer, called a gate dielectric.When an appropriate voltage, which is usually called the gate voltage, is applied to the gate dielectric, a channel is opened through the depletion region and current flows in the channel. The ability to control the current flow is what makes the MOSFETs so versatile and also allows for use in many different applications.One particular application of APTM20DUM10TG is in signal amplification. The signal amplification can be achieved by connecting several n-type and p-type FETs in cascode configuration. In this configuration, one FET is connected to the signal input and another FET is connected to the output. The signal voltage is applied to the gate of one of the FETs, which is in turn connected to the gate of the other FET. The input signal is then conducted through the first FET and amplified with the help of the second.Another application of APTM20DUM10TG is in power control. This can be achieved by combining p-type and n-type semiconductor devices, such as MOSFETs. A p-MOSFET and an n-MOSFET are connected in such a way that when a power supply is applied to the gates of the MOSFETs, the current flow can be regulated by controlling the gate voltage.APTM20DUM10TG technology is also used in digital electronic systems. It can be employed in logic circuits, which are used to perform the logic operations used in most modern digital electronic systems. In these systems, FETs are used in combination with other transistors to create logic gates, which process the inputs from several sources and send out an appropriate response based on the input.APTM20DUM10TG is an excellent choice for many applications in modern electronics and its versatility can make it even more valuable. Its simple structure and wide variety of applications make this technology an ideal choice for many projects.

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