Allicdata Part #: | APTM50AM38STG-ND |
Manufacturer Part#: |
APTM50AM38STG |
Price: | $ 99.53 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 2N-CH 500V 90A SP4 |
More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 500V 90A 69... |
DataSheet: | APTM50AM38STG Datasheet/PDF |
Quantity: | 20 |
1 +: | $ 90.48060 |
10 +: | $ 84.56840 |
25 +: | $ 81.61160 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 90A |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 45A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: | 246nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 11200pF @ 25V |
Power - Max: | 694W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP4 |
Supplier Device Package: | SP4 |
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The APTM50AM38STG is a type of Field Effect Transistor (FET) that is part of a family of MOSFET Arrays. This device is a 4-channel, 28-lined, FET array with a N-channel MOSFET structure. The device is designed for applications requiring low noise, low power, and high input impedance. It is suitable for use in high-frequency circuits such as audio amplifiers and satellite communication systems. Its small size, high speed, and low power consumption make it an excellent choice for many applications.
The APTM50AM38STG is made up of two transistors, each with a different type of gate. P-type transistors are used for the input transistors and N-type transistors are used for the output transistors. The device also includes an internal protective circuit that provides protection from short circuits and overvoltage. The device can be operated at supply voltages between 4.5 and 15V. The maximum current draw is 150mA.
The device has two gates, an input gate and an output gate. The input gate is used to control the drain voltage and current. The output gate is used to control the source voltage and current. The gate is controlled by an external signal or by a current source. The device also has an internal temperature sensor that monitors the temperature of the device and provides a protective circuit if the temperature exceeds a certain level.
The working principle behind the APTM50AM38STG is based on the MOSFETs two input terminals. With proper application of a suitable voltage and current, a change in the gate potential will cause a change in the drain potential, resulting in current flow between the drain and the source. This phenomenon is called the transfer or ‘on’ effect. The transfer effect is the basis for most MOSFET-based circuits due to its excellent switching speed, low driving power, and low power consumption.
The APTM50AM38STG can be used in a variety of applications, including audio amplifiers, wireless communication systems, satellite communication systems, and medical imaging systems. The device is designed to provide low noise, low power, and high input impedance. Its small size, high speed, and low power consumption make it an excellent choice for many applications.
The APTM50AM38STG is a versatile device that can be used in a variety of applications. Its small size and low power consumption make it an ideal choice for many applications. The device can also be used in high-frequency applications, such as audio amplifiers and satellite communication systems. Its internal protective circuit ensures that the device is safe to operate in any environment.
The specific data is subject to PDF, and the above content is for reference
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