Allicdata Part #: | APTM50AM70FT1G-ND |
Manufacturer Part#: |
APTM50AM70FT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 2N-CH 500V 50A SP1 |
More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 500V 50A 39... |
DataSheet: | APTM50AM70FT1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 50A |
Rds On (Max) @ Id, Vgs: | 84 mOhm @ 42A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 340nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 10800pF @ 25V |
Power - Max: | 390W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP1 |
Supplier Device Package: | SP1 |
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The APTM50AM70FT1G is a transistor-transistor logic (TTL), transistor array, specifically a Field Effect Transistor (FET). FETs are a type of transistor which operate by using electricity to modify the electric field generated by one or more other electrodes to control the flow of current between the different electrodes. FETs are divided into two major categories: Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) and Junction Field Effect Transistors (JFETs). APTM50AM70FT1G is a MOSFET.
MOSFETs are used in various applications in the electronics world. They are often used as a power switch due to their low power consumption and low on-resistance ratio. They can also be used as analog amplifiers, as well as for gain control and for output protections. MOSFETs are used for interfacing logic voltages to higher voltages, which can be beneficial for the stability of sensitive circuits and signals.
APTM50AM70FT1G arrays are specifically designed for TTL logic applications, meaning they are usually used to interface TTL logic to higher power applications, as well as to provide level shifting. They are also used, when needed, to provide higher input/output impedance and better noise immunity than conventional logic components. This product has a maximum operating voltage of 45v, a maximum power dissipation of 470mW, and has RON/ROFF (on/off) resistance of 0.36/0.56 Ohms respectively.
In terms of its working principle, the APTM50AM70FT1G is a P-channel enhancement MOSFET, meaning that the source is connected to the positive voltage potential and the gate is connected to the negative voltage potential. The FET is biased OFF when the gate-source voltage is smaller than the threshold voltage, and this prevents the conduction of current. When a positive voltage is applied to the gate, the electrons in the substrate (source region) are attracted and pulled in towards this gate, allowing the current to flow. This is what is known as the FET\'s ON state.
Due to its wide range of capabilities, the APTM50AM70FT1G can be used in an array of applications. It is suitable for DC-DC converters, switching power supplies and UPS systems, which require low-voltage and high-speed switching devices. The device is also often used in consumer electronics, such as digital cameras and cell phones. Other applications for the APTM50AM70FT1G include temperature controllers, motor control circuits, instrumentation systems, and lighting controls.
In conclusion, the APTM50AM70FT1G is a high-performance, low-voltage device with a wide range of usage in the electronics industry. It is suitable for use in TTL logic applications such as DC-DC converters, switching power supplies and UPS systems, as well as consumer electronics, temperature controllers, motor control circuits and instrumentation systems.
The specific data is subject to PDF, and the above content is for reference
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