APTM50H14FT3G

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The APTM50H14FT3G is a power transistor array made up of 7 series connected N-channel transistors, each with a drain current rating of 50 mA. It is classified as a short leads power MOSFET array, or monolithic integrated circuit. It is an integrated circuit (IC) type of transistor array which is widely used in different applications such as consumer electronics, device, instrumentation, medical, and automotive applications.

The APTM50H14FT3G is a very small and compact package which contains four transistors in a three-lead package with a drain, a gate and a source lead. It is also a low-voltage device offering excellent performance when used in applications that require low voltage operation. The device is typically used with a remote source for very high switching power between 9V and 14V.

The APTM50H14FT3G is a single package, three terminal-3D Power MOSFET array with a low on-resistance level, low threshold voltage and excellent thermal and electrical characteristics. It is designed for use in demanding applications such as high-speed switching and power conversion. The APTM50H14FT3G can be used in any power conversion application where high-current switching and minimum switching voltage is required.

The APTM50H14FT3G is comprised of 7 series connected N-channel transistors which are connected in series and gate coupled. This gate coupling enables the device to provided high gate charge and high current gain in a single package. The gate-source capacitance is negligible due to the low on-resistance level. The APTM50H14FT3G provides excellent regulation characteristics, making it a reliable device for uninterrupted operation.

The APTM50H14FT3G is designed for low-voltage high-power applications where excellent performance is necessary. It utilizes a wide range of gate-controlled, low voltage switching technologies and features a high drain current rating of 50 mA. This current rating allows it to be used in a variety of applications such as motor control and switching applications.

The operating principle of the APTM50H14FT3G is based on the principle of charge-carrier concentrations (QCC). When the gate voltage is applied, the electrons in the element are repelled away from the gate region, leading to charge segregation and the formation of an inversion layer. This inversion layer forms an electric field which controls the flow of the electrons and thus, regulates the current flow between the drain and the source. The APTM50H14FT3G offers very reliable performance in applications where high current switching and low VGS(th) is necessary.

In conclusion, the APTM50H14FT3G is designed to be a very low voltage, high performance device for a variety of applications. Its very small size and low switching voltage make it a highly desirable device for low-voltage, high-current applications. The APTM50H14FT3G is an excellent choice for applications requiring high-speed switching and reliable power conversion.

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