APTM50HM35FG Allicdata Electronics
Allicdata Part #:

APTM50HM35FG-ND

Manufacturer Part#:

APTM50HM35FG

Price: $ 137.62
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 4N-CH 500V 99A SP6
More Detail: Mosfet Array 4 N-Channel (H-Bridge) 500V 99A 781W ...
DataSheet: APTM50HM35FG datasheetAPTM50HM35FG Datasheet/PDF
Quantity: 1000
100 +: $ 125.10700
Stock 1000Can Ship Immediately
$ 137.62
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 99A
Rds On (Max) @ Id, Vgs: 39 mOhm @ 49.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Power - Max: 781W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6
Description

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Introduction

APTM50HM35FG is a kind of power MOSFET array that contains both N-Channel and P-Channel power MOSFETs. This array of MOSFETs has been designed to replace several discrete MOSFETs with a single device, offering several advantages such as greater current carrying capacity, higher efficiency, and improved reliability. This power MOSFET array can be used in a wide range of applications and its working principle involves the use of an electric field to control the channel current.

Applications

APTM50HM35FG MOSFET array can be used for a variety of applications such as switching, power conversion, motor control, and power management. The most common applications for this power MOSFET array include power systems, light and dark appliances, power cells of telecommunication systems, energy-saving lighting and monitoring systems, distribution and automation, LED lighting, solar power systems, automotive systems, and industrial controls.

Other common uses include audio amplifiers, high-frequency switching, power switching, motor control, and saturable reactor applications. This power MOSFET array can also be used for current sense and supervisory circuits, high-current drive and pulse-wave modulation, and line-drivers with low-side MOSFET protection.

Working Principle

The APTM50HM35FG power MOSFET array works using the principle of an electric field. This electric field is created by applying a voltage to the gate (the regions between the source and drain), which in turn creates an electric field that can be used to control the current through the channel. This channel current is controlled by the applied voltage, which is opposed by the intrinsic body effect, resulting in higher current gain and reduced power consumption.

The APTM50HM35FG MOSFET array is capable of handling very high currents and also offers low on-resistance, which makes it ideal for applications that require high-power switching or conversion. Additionally, due to its small size and low RDSon, it can be used in space-constrained applications, such as in handheld gadgets or laptops.

Conclusion

The APTM50HM35FG power MOSFET array is a versatile and powerful device that can be used in a wide range of applications. It uses electric field to control the channel current, allowing it to handle high currents and offer low power consumption. Additionally, its small size and low RDSon make it suitable for use in space-constrained applications.

The specific data is subject to PDF, and the above content is for reference

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