
Allicdata Part #: | APTM50HM38FG-ND |
Manufacturer Part#: |
APTM50HM38FG |
Price: | $ 124.24 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 4N-CH 500V 90A SP6 |
More Detail: | Mosfet Array 4 N-Channel (H-Bridge) 500V 90A 694W ... |
DataSheet: | ![]() |
Quantity: | 1000 |
100 +: | $ 112.94300 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | 4 N-Channel (H-Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 90A |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 45A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: | 246nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 11200pF @ 25V |
Power - Max: | 694W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP6 |
Supplier Device Package: | SP6 |
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APTM50HM38FG Application Field and Working Principle
The APTM50HM38FG is a three-terminal array of 8 field effect transistors (FETs). It is a monolithic integrated circuit manufactured by Advanced Power Technology Inc. that offers high performance and low power consumption. This device is specifically designed for high performance, low-cost applications and is suitable for use in both industrial and consumer applications. This FET array is capable of delivering high-performance signal amplification and switching in a variety of different designs and power management requirements.
This device offers low on-resistance of 0.3 ohms and a low input capacitance of 20 fF, when operated at its rated supply voltage of 3 V. It is also capable of providing a continuous drain current of 20 mA. Its maximum operating temperature range is from 0 °C to 70 °C.
The APTM50HM38FG uses an innovative concept in which the eight FETs are connected internally in an array, providing improved speed and power transfer compared to other devices. The FET array provides superior design benefits, allowing the designer to address a range of different design requirements with a single component.
The working principle of the APTM50HM38FG is simple. The three terminals are the source, gate, and drain respectively. The source terminal is connected to the power supply and its function is to provide the current to the device. The gate terminal is connected to the control voltage source. The control voltage regulates the current flow through the FET array. The drain terminal is connected to the load side and directs the current from the source terminal to the load side. The resistance between the source and drain terminals varies according to the applied control voltage as the input signal is amplified.
The APTM50HM38FG is ideal for applications such as motor speed control, Servo systems, switching power supplies, DC-DC converters, and RF systems. It is designed to operate with a wide variety of FETs, including MOSFETs, silicon-based N-Channel FETs, and P-Channel FETs. It is also compatible with a range of different gate-node voltages and circuitry, providing flexibility in circuit design.
In conclusion, the APTM50HM38FG is an excellent choice for a wide range of applications, offering high performance, low power consumption, and low on-resistance. Its unique array of 8 FETs provides superior design benefits and is ideal for use in consumer, industrial, and power management applications.
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