Allicdata Part #: | APTM50HM65FT3G-ND |
Manufacturer Part#: |
APTM50HM65FT3G |
Price: | $ 77.43 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 4N-CH 500V 51A SP3 |
More Detail: | Mosfet Array 4 N-Channel (H-Bridge) 500V 51A 390W ... |
DataSheet: | APTM50HM65FT3G Datasheet/PDF |
Quantity: | 17 |
1 +: | $ 70.38990 |
10 +: | $ 65.98870 |
25 +: | $ 62.90900 |
100 +: | $ 59.38970 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | 4 N-Channel (H-Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 51A |
Rds On (Max) @ Id, Vgs: | 78 mOhm @ 25.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 7000pF @ 25V |
Power - Max: | 390W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP3 |
Supplier Device Package: | SP3 |
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APTM50HM65FT3G is an advanced semiconductor device at the cutting edge of technology, specially designed to come with multiple features related to the application field and the working principle of transistors, particularly FETs and MOSFETs with arrays. By delivering excellent Chip Scale Packaging, this device has a big advantage in terms of its size, requiring a minimum of space and allowing greater integration with other devices.
APTM50HM65FT3G is primarily a MOSFET, which is a type of field-effect transistor. A MOSFET is a device used for controlling and amplifying electrical signals and is commonly used in both digital and analog circuits. MOSFETs are used in a wide variety of circuits, such as power supplies, amplifiers, and high-speed switching. The MOSFET is an integral component of the transistor family and has been a key component of many electronics since the 1970s.
The chip consists of an array of MOSFETs, with each MOSFET having its own source, drain, and gate. These transistors are connected in parallel, using their respective gates. This configuration allows for greater control and greater amplification of signals. When a signal is brought in from the source, it is transferred to the gate, amplified and then sent out through the drain.
An important feature of the APTM50HM65FT3G is its high speed. It can handle up to 65GHz at a switch time of 15ns, making it one of the fastest transistors on the market. This allows it to be used in high speed applications such as mass data transfer, where speed is of the essence. Moreover, the low on-resistance of the device—less than 35m Ω—is ideal for low power applications, ensuring that the device does not consume too much energy.
The APTM50HM65FT3G is also notable for its low gate-oxide charge, which ensures durability and longevity of the device. The low gate-oxide charge also helps prevent short-determination and switching errors in digital circuits. Combining this feature with the built-in ESD protection and the low on-resistance, it is easy to see why the APTM50HM65FT3G is perfect for both digital and analog applications.
The chip can work at a temperature range of –40 to +150°C and boasts low noise levels and extremely low power consumption. The device is also suited for a wide range of voltages, from 10 to 65V. The multiple power ports available in the package make it suitable for a wide array of applications, including battery powered designs as well as automotive applications.
In summary, APTM50HM65FT3G is a specialized semiconductor device that features an array of MOSFETs that can operate at very high speed. It comes with a range of features, such as low on resistance, low gate-oxide charge, low power consumption, and excellent ESD protection. With its built-in features and wide range of applications, this device is an excellent choice for digital and analog applications.
The specific data is subject to PDF, and the above content is for reference
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