APTMC120AM12CT3AG Allicdata Electronics
Allicdata Part #:

APTMC120AM12CT3AG-ND

Manufacturer Part#:

APTMC120AM12CT3AG

Price: $ 481.57
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 2N-CH 1200V 220A SP3F
More Detail: Mosfet Array 2 N Channel (Phase Leg) 1200V (1.2kV)...
DataSheet: APTMC120AM12CT3AG datasheetAPTMC120AM12CT3AG Datasheet/PDF
Quantity: 1000
100 +: $ 437.79600
Stock 1000Can Ship Immediately
$ 481.57
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: 2 N Channel (Phase Leg)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 220A
Rds On (Max) @ Id, Vgs: 12 mOhm @ 150A, 20V
Vgs(th) (Max) @ Id: 2.4V @ 30mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 483nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 1000V
Power - Max: 925W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
Description

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The APTMC120AM12CT3AG is an array of 12 parallel N-channel MOSFETs that typically come in a case size of PG-DIP-8 or TSSOP-8. It has an on-state resistance of 0.045Ω, a peak current rating of 1A, a threshold voltage of -1.1V, and a maximum drain-source voltage of 30V. As a result, it is widely used in many different applications and is a popular choice for those who require precise control and operation with minimal power consumption.

The APTMC120AM12CT3AG can be used in applications that require low power consumption, such as logic level shifting, battery-powered devices, automotive circuitry, and more. It is ideal for applications that need to switch fast and require precise control, such as in switching power supplies, digital logic circuits, and voltage regulator modules. It is also incredibly useful for applications that need to provide short-circuit protection, as it can easily detect a short circuit and cut off the load current.

The APTMC120AM12CT3AG operates using the principle of majority-carrier control. In an array of MOSFETs, each device is biased into a pinch-off region by a positive gate-to-source voltage. This is referred to as a “threshold voltage” and is generally 1.1V in this case. When this voltage is applied to the gate terminal of the array, the device allows current to flow from source to drain. Although each device has its own threshold voltage, their interconnected design enables them to share the voltage and provides a uniform distribution of current.

The APTMC120AM12CT3AG has been designed specifically for applications that must operate at lower power levels, due to its low on-state resistance and low power threshold voltage. The devices are also designed with a low drain-source to gate-source capacitance, which allows them to switch quickly without any delays. This makes them an ideal choice for switch-mode power supplies and high-frequency signal processing systems.

Due to its low cost and ability to work in low power applications, the APTMC120AM12CT3AG is an excellent choice for any project that needs precise control and low power operation. It is an invaluable asset for any high-frequency signal processing system and is a popular choice for those who need low power requirements from their devices.

The specific data is subject to PDF, and the above content is for reference

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