Allicdata Part #: | APTML502UM90R020T3AG-ND |
Manufacturer Part#: |
APTML502UM90R020T3AG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 2N-CH 500V 52A SP3 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 500V 52A 568W Chas... |
DataSheet: | APTML502UM90R020T3AG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 52A |
Rds On (Max) @ Id, Vgs: | 108 mOhm @ 26A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7600pF @ 25V |
Power - Max: | 568W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP3 |
Supplier Device Package: | SP3 |
Description
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APTML502UM90R020T3AG is a type of semiconductor device in the Arrays section of Transistors and FETs called MOSFETs. It is an advanced type of transistor device featuring impressive performance capabilities and extremely low power consumption. MOSFETs, or Metal Oxide Semiconductor Field Effect Transistors, are three-terminal devices that are formed by combining a metal-filled gate electrode with an insulated gate oxide layer and a source and drain region filled with n-type semiconductor. This allows electrons and holes to move freely between the source and the drain by the use of the voltage applied to the gate. This makes them ideal for applications where high density and low power consumption are desirable characteristics.The APTML502UM90R020T3AG is a 90V MOSFET array with an RDS(on) of 0.0200 Ohms. This array contains dual devices in either a single package or separate packages. It is a dual N-channel enhancement MOSFET that features an ultra-low on-resistance of 0.0200Ω and a high-speed operation of 25nS for each device. This makes it an ideal solution for efficient power delivery in applications where power is at a limited resource. This product also features a high maximum operating temperature of 1150°C and a high maximum drain current flow of 10A (per device). It is rated at a maximum high frequency of 10GHz and a maximum common-mode transient immunity of -30dBc. This makes it one of the most efficient and reliable MOSFETs available on the market.The various features of this MOSFET array make it ideal for many different applications. Some of these include high velocity switching applications, such as class D inverters and automotive relays, as well as low noise amplifier designs and dc-dc converters. This product is also suitable for audio amplifiers, data modems and personal media systems due to its efficient power delivery and low noise capability.Overall, the APTML502UM90R020T3AG is an advanced MOSFET array that can be used in a variety of applications. Its impressive performance and low power consumption make it an excellent choice for applications where efficient power delivery and reliable operation are necessary. Its highly efficient operation and high thermal capabilities make it one of the most reliable MOSFETs available on the market.
The specific data is subject to PDF, and the above content is for reference
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