BLC9H10XS-300PZ

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The BLC9H10XS-300PZ is a ge-type insulated gate bipolar transistor (IGBT) with high power and reloaded properties, designed for use in radio-frequency (RF) circuits. It is especially suited for applications such as radio transmitters, receivers, transmit-receive switches, amplifiers and phase shifters. This IGBT has a high power range of up to 300W with extremely low on-resistance of less than 5Ω, which makes it highly efficient and gain-bandwidthproduct of up to 2000 MHz with ease. This IGBT features a low saturation voltage, an integrated protection circuit, a soft saturation capable of controlling the conduction losses, and an anti-parallel diode with low reverse recovery time.

The BLC9H10XS-300PZ is made of high-quality silicon which ensures excellent reliability. The package of the device includes a built in protection circuit which adds to the robust properties of the device. The protection circuit can prevent overcurrent, under voltage and over temperature conditions, and also offers a delay time for delayed switching of the system. The protection circuit also improves the vibration and shock resistance of the IGBT.

When it comes to operation, the BLC9H10XS-300PZ is designed to be used within an DC voltage range from 0V to 600V, and can handle currents in the range from 0A to 4A in a 100% duty cycle environment. Moreover, the IGBT supports continuous wave operation with a switching frequency up to 100 kHz, 25 kHz for pulsed operation, and 10 MHz for RF applications. This wide frequency range makes the device suitable for use in various RF circuits, such as amplifiers, transmitters, receivers, and phase shifters.

In addition, the BLC9H10XS-300PZ offers low on-resistance, making it an excellent choice for applications that require high efficiency. Due to its low on-resistance and low saturation voltage, the device is able to provide a high power gain-bandwidth product. It also features a very low switching time, which makes it suitable for use in high-speed applications. And due to its high breakdown voltage rating, the device is ideal for use in applications requiring high outputs.

Moreover, the BLC9H10XS-300PZ can be used in various operating temperature ranges, including industrial, commercial, and military. Additionally, the device can be used in field applications, as its high reverse voltage capability enables it to handle large RF signals. Overall, its high power, fast switching speed, and excellent thermal characteristics make the BLC9H10XS-300PZ a cost-effective and reliable device for use in high-performance RF applications.

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