BLC9G27LS-150AVZ Allicdata Electronics
Allicdata Part #:

568-12821-ND

Manufacturer Part#:

BLC9G27LS-150AVZ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 15DB SOT12751
More Detail: RF Mosfet LDMOS (Dual), Common Source 28V 400mA 2....
DataSheet: BLC9G27LS-150AVZ datasheetBLC9G27LS-150AVZ Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Transistor Type: LDMOS (Dual), Common Source
Frequency: 2.5GHz ~ 2.69GHz
Gain: 15dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 400mA
Power - Output: 150W
Voltage - Rated: 65V
Package / Case: SOT1275-1
Supplier Device Package: DFM6
Description

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The BLC9G27LS-150AVZ has many uses and applications in the electronics industry. It is a Radio Frequency (RF) MOSFET (metal-oxide-semiconductor field-effect transistor), which is a type of transistor specifically designed for use in radio frequency applications. It is made out of a specialized type of silicon, which is mostly used for high-frequency purposes. The BLC9G27LS-150AVZ is an enhancement-mode MOSFET, meaning that its gate voltage needs to be increased to activate its conducting channel - its default state is off or non-conducting. Due to its high frequency properties, it can be used in many different applications, including radar systems, satellite communications, and high-speed computing.

In order to understand the BLC9G27LS-150AVZ\'s application field and working principle, let\'s first look at how a typical transistor works. A transistor is normally a three lead device that amplifies or switches electric current. There are two basic types of transistors: the bipolar transistor and the field-effect transistor (FET). The BLC9G27LS-150AVZ is an example of an FET. FETs operate differently than bipolar transistors in that they control the current flow through a "channel" that is formed between the source and drain by a nearby electric field. Since this field can be easily manipulated by controlling the voltage between the gate and the source, FETs can be used to both amplify or switch current. This makes them especially useful for their ability to switch high frequency signals.

The BLC9G27LS-150AVZ is capable of handling high frequencies in the range of 770 MHz to 2.2 GHz, and its output power is rated at 150 watts. The transistor is constructed of a special type of silicon that is optimized for high frequency operations. It also has a low RDS (on) rating of 0.18 ohms, which is important for reducing power consumption and increasing overall efficiency. In fact, the BLC9G27LS-150AVZ boasts a power gain of around 20 dB, and a drain efficiency of over 75%.

The multipurpose transistor is commonly used in many RF applications due to its various advantages. For example, it can be used in radio systems to increase the output power for better coverage, or to provide better modulation of signals for higher data rates. In satellite communications, it can be used for both transmitting and receiving signals, and its high frequency capability is especially useful for high-speed computing applications.

Another useful application for the BLC9G27LS-150AVZ is in radar systems, where it can be used to amplify the return signals from distant objects, allowing the system to accurately identify and measure the distance of those targets. Lastly, due to its fast switching speeds, it can even be used as a switch to control various radio frequency components, such as amplifiers, mixers, and oscillators.

Ultimately, the BLC9G27LS-150AVZ is a versatile radio frequency transistor that can provide increased power, efficiency, and accuracy in numerous applications. Its low power consumption, wide frequency range, and fast switching speeds make it an ideal choice for a wide variety of consumer and commercial projects.

The specific data is subject to PDF, and the above content is for reference

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