BLC9G20LS-361AVTZ Allicdata Electronics
Allicdata Part #:

1603-1128-ND

Manufacturer Part#:

BLC9G20LS-361AVTZ

Price: $ 60.28
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 15.7DB SOT12583
More Detail: RF Mosfet LDMOS (Dual), Common Source 28V 300mA 1....
DataSheet: BLC9G20LS-361AVTZ datasheetBLC9G20LS-361AVTZ Datasheet/PDF
Quantity: 60
1 +: $ 54.80370
10 +: $ 51.97500
100 +: $ 47.02500
Stock 60Can Ship Immediately
$ 60.28
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Transistor Type: LDMOS (Dual), Common Source
Frequency: 1.81GHz ~ 1.88GHz
Gain: 15.7dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 300mA
Power - Output: 360W
Voltage - Rated: 65V
Package / Case: SOT-1258-3
Supplier Device Package: DFM6
Description

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The BLC9G20LS-361AVTZ is a RF MOSFET that is used to complement and replace traditional bipolar-junction transistors (BJTs) in a wide variety of RF and microwave applications. The device is designed to provide higher current levels and better performance at higher frequencies than BJTs. In addition, the device\'s integrated gate dielectric technology provides superior electrical characteristics and reduced thermal noise.

The BLC9G20LS-361AVTZ is a depletion-mode MOSFET, which means the channel is normally on and current flows from source to drain when the gate source voltage is less than the threshold voltage. As with all MOSFETs, the device is capable of withstanding relatively large voltages in either direction through the drain and source, withstanding as much as 30 Volts between the gate and source with a maximum of 14 Volts between the drain and source. The device is also able to operate at frequencies as high as 3 GHz.

The BLC9G20LS-361AVTZ is used primarily in RF and microwave applications, where its excellent high frequency performance, high drain current, and low thermal noise make it an excellent choice. Its key applications include:

  • RF amplifier stages
  • RF control circuits
  • RF transmitters and receivers
  • Harmonic oscillators
  • Frequency multipliers
  • Radio frequency integrated circuits (RFICs)

The BLC9G20LS-361AVTZ is a self-protected MOSFET that has a built-in protective layer between the gate and drain. This layer prevents the device from being damaged by electrostatic discharges and short-circuit conditions when connecting to the device. In addition, the device is designed to operate over a wide temperature range, making it suitable for use in a variety of applications.

The device is designed to operate with a gate-source voltage of 6 Volts and a drain-source voltage of 18 Volts. The gate-source voltage should not exceed 6 Volts and the drain-source voltage should not exceed 30 Volts. The device is able to operate up to a maximum frequency of 3 GHz and has a maximum source-drain current rating of 20 amperes.

The BLC9G20LS-361AVTZ is an excellent device for a variety of RF and microwave applications and is suitable for use in high-frequency and temperature-sensitive applications. It has excellent electrical characteristics and integrated protection from ESD and other overcurrent conditions, making it a reliable and robust device for use in a range of applications.

The specific data is subject to PDF, and the above content is for reference

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