BLC9G20LS-470AVTY Allicdata Electronics
Allicdata Part #:

BLC9G20LS-470AVTY-ND

Manufacturer Part#:

BLC9G20LS-470AVTY

Price: $ 66.51
Product Category:

Discrete Semiconductor Products

Manufacturer: Ampleon USA Inc.
Short Description: RF FET LDMOS 65V 15.7DB SOT12583
More Detail: RF Mosfet LDMOS (Dual), Common Source 28V 400mA 1....
DataSheet: BLC9G20LS-470AVTY datasheetBLC9G20LS-470AVTY Datasheet/PDF
Quantity: 1000
100 +: $ 60.45960
Stock 1000Can Ship Immediately
$ 66.51
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: LDMOS (Dual), Common Source
Frequency: 1.81GHz ~ 1.88GHz
Gain: 15.7dB
Voltage - Test: 28V
Current Rating: --
Noise Figure: --
Current - Test: 400mA
Power - Output: 470W
Voltage - Rated: 65V
Package / Case: SOT-1258-3
Supplier Device Package: DFM6
Description

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BLC9G20LS-470AVTY is a type of RF MOSFET (metal-oxide semiconductor field effect transistor). It has been specifically designed for high power applications such as radio frequencies (RF) amplification, switching, and signals processing. It has a robust construction with low noise and wide frequency capabilities, making it an ideal choice for high frequency amplification applications.

The BLC9G20LS-470AVTY belongs to the FETs, MOSFETs, and RF category due to its usage in RF amplification and signal processing. The MOSFET is a type of transistor that uses a metal gate to control the flow of electrons through gate oxide layers. This makes them ideal for applications that require low power dissipation and high speed switching, making them suitable for high frequency applications. The BLC9G20LS-470AVTY features a peak drain current of up to 370A and a peak drain-source voltage of 200V, making it ideal for high power applications. This device also features a low input capacitance of 0.41 pF and high output capacitance of 3.5 pF, making it suitable for use in high frequency applications.

The working principle of the BLC9G20LS-470AVTY is similar to that of other MOSFETs. The current flow through the device is controlled by a voltage applied to the gate terminal. By applying a suitable voltage to the gate terminal, the device can be used to control the flow of current through the drain-source terminals. The current flow is dependent on the voltage applied to the gate terminal, the drain-source voltage, and the characteristics of the device itself. When the drain-source voltage is increased, the current flow is also increased, as is the dissipation power.

The BLC9G20LS-470AVTY also features a very low on-resistance of 3.2 ohms, making it suitable for high frequency operations. The low on-resistance of the device also helps to reduce power consumption. In addition, this device features a low leakage current of 200nA and a low gate-source capacitance of 0.1 pF, making it suitable for frequency-sensitive applications.

The BLC9G20LS-470AVTY is suitable for a variety of applications, such as radio equipment, power amplifiers, switching applications, and signal processing, among others. It is typically used in high power and/or high frequency applications due to its robust construction and low noise. The device is also suitable for use in wide operating temperature ranges, making it an ideal choice for applications where high performance and reliability is required.

The specific data is subject to PDF, and the above content is for reference

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