BLC9G20LS-120VTZ

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BLC9G20LS-120VTZ is a N-channel, normally off, depletion-mode, metal-oxide-semiconductor field-effect transistor (MOSFET) manufactured by ON Semiconductor. This device has been designed for use in applications such as RF power amplifiers, voltage-controlled oscillators, and RF switches.

The working principle of the BLC9G20LS-120VTZ transistor is based on the MOSFET transistor. When a voltage is applied between the gate and source terminals, it modulates the conductivity of the channel and controls the flow of current between the source and drain. This voltage controllable current gain is the concept behind the action of an MOSFET transistor.

The BLC9G20LS-120VTZ has an off-state drain current of less than 5 μA, a typical on-resistance of 0.1 Ω, and a typical transconductance of 12 mS. It has a maximum drain-source breakdown voltage of 28 V and a gate-source breakdown voltage of ±20 V. Its drain-source capacitance is typically 1000 pF and its total gate charge is typically 6 nC. This device is offered in lead-free SOT-23-6 package.

The BLC9G20LS-120VTZ transistor is ideal for use in a wide range of applications including RF power amplifiers, voltage-controlled oscillators, and RF switches. Its small size, low on-resistance, and high gate-source breakdown voltage makes it suitable for many high frequency and high power applications. It also has a low gate charge, making it suitable for high-speed switching applications. This device is suitable for operation at frequencies up to 2.4 GHz.

Due to its high frequency and power capabilities, BLC9G20LS-120VTZ transistors are ideally suited for use in RF power amplifiers, voltage-controlled oscillators, and RF switches. The device can be used to provide power amplification, modulation, and noise shaping in these applications. Its low on-resistance and high transconductance make it well suited for high frequency switching applications. The device\'s small size and low gate charge also makes it suitable for use in high-speed switching applications.

In summary, the BLC9G20LS-120VTZ is a N-channel, normally off, depletion-mode, metal-oxide-semiconductor field-effect transistor. It is ideal for use in applications such as RF power amplifiers, voltage-controlled oscillators, and RF switches. This device is suitable for operation at frequencies up to 2.4 GHz and has a low gate charge, making it suitable for high-speed switching applications. It has a typical on-resistance of 0.1 Ω and a typical transconductance of 12 mS. It is offered in lead-free SOT-23-6 package.

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